Inventor

MATHAD GANGADHARA S

US22 patents

⚠️ This page may combine multiple inventors who share the name “MATHAD GANGADHARA S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATHAD GANGADHARA S

IBM

Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps

Anisotropic silicon etching in fluorinated plasma

Method for control of etch profile

Monitoring technique for plasma etching

Single wafer plasma etch reactor

Method of reducing RIE lag for deep trench silicon etching

Laser induced dry etching of vias in glass with non-contact masking

Laser induced chemical etching of metals with excimer lasers

Method of fabricating a chip interposer

Method of etching high aspect ratio openings

Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process

Laser induced dry chemical etching of metals

Method to increase the etch rate and depth in high aspect ratio structure

Process of forming a dual overhang collimated lift-off stencil with subsequent metal deposition

Collimated metal deposition

Method to achieve increased trench depth, independent of CD as defined by lithography

Method to achieve increased trench depth, independent of CD as defined by lithography

INFINEON TECHNOLOGIES AG

Method to fill deep trench structures with void-free polysilicon or silicon

Method of deep trench formation with improved profile control and surface area

Elimination/reduction of black silicon in DT etch

Method for monitoring the rate of etching of a semiconductor

INFINEON TECHNOLOGIES CORP

Optical measurement of planarized features