Inventor

CLENDENNING SCOTT B

US48 patents

⚠️ This page may combine multiple inventors who share the name “CLENDENNING SCOTT B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CLENDENNING SCOTT B

INTEL CORP

Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)

Energy storage device, method of manufacturing same, and mobile electronic device containing same

Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions

Capacitor architectures in semiconductor devices

Microelectronic conductive routes and methods of making the same

Selective deposition utilizing sacrificial blocking layers for semiconductor devices

Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

Conformal thin film deposition of electropositive metal alloy films

Selective gate spacers for semiconductor devices

Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping

Selective gate spacers for semiconductor devices

Self-aligned gate endcap (SAGE) architectures without fin end gap

Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs)

Stacked 2D CMOS with inter metal layers

Vertically stacked memory elements with air gap

Local interconnect with air gap

Selective gate spacers for semiconductor devices

Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping

Differentiated molecular domains for selective hardmask fabrication and structures resulting therefrom

Semiconductor devices having ruthenium phosphorus thin films

Electropositive metal containing layers for semiconductor applications

Additives to improve the performance of a precursor source for cobalt deposition

Integrated circuit structures with graphene contacts

Capacitor architectures in semiconductor devices

Capacitor architectures in semiconductor devices

Capacitor architectures in semiconductor devices

2D layered gate oxide

Passivation layer for germanium substrate

Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication

Halogen treatment for NMOS contact resistance improvement

Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same

Transistor devices with high-k perovskite gate dielectrics

Mid-valent molybdenum complexes for thin film deposition

Metal aluminum gallium indium carbide thin films as liners and barriers for interconnects

Selective deposition utilizing sacrificial blocking layers for semiconductor devices

Staggered vertically spaced integrated circuit line metallization with differential vias and metal-selective deposition

Method of increasing an energy density and an achievable power output of an energy storage device

Fill of vias in single and dual damascene structures using self-assembled monolayer

Ribbon or wire transistor stack with selective dipole threshold voltage shifter

Nanostructured electrolytic energy storage devices

ROMERO PATRICIO E

Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)

Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)

Electropositive metal containing layers for semiconductor applications

DEWEY GILBERT

Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

GARDNER DONALD S

Energy storage device, method of manufacturing same, and mobile electronic device containing same

BLACKWELL JAMES M

Method of forming a metal from a cobalt metal precursor

CLENDENNING SCOTT B

Methods of forming nickel sulphide film on a semiconductor device

WONG LAWRENCE D

Carbon nanotube semiconductor devices and deterministic nanofabrication methods