P

Inventor

ROMERO PATRICIO E

US22 patents
⚠️ This page may combine multiple inventors who share the name “ROMERO PATRICIO E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

18 patents
US9067958B2Jun 30, 2015

Scalable and high yield synthesis of transition metal bis-diazabutadienes

INTEL CORP79 citations97
US9932671B2Apr 3, 2018

Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)

INTEL CORP10 citations84
US9530733B2Dec 27, 2016

Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions

INTEL CORP8 citations84
US10243080B2Mar 26, 2019

Selective deposition utilizing sacrificial blocking layers for semiconductor devices

INTEL CORP3 citations73
US9455150B2Sep 27, 2016

Conformal thin film deposition of electropositive metal alloy films

INTEL CORP3 citations73
US11512098B2Nov 29, 2022

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

INTEL CORP3 citations72
US10971600B2Apr 6, 2021

Selective gate spacers for semiconductor devices

INTEL CORP1 citations72
US10396176B2Aug 27, 2019

Selective gate spacers for semiconductor devices

INTEL CORP3 citations72
US9786559B2Oct 10, 2017

Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs)

INTEL CORP3 citations69
US12344627B2Jul 1, 2025

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

INTEL CORP0 citations62
US11866453B2Jan 9, 2024

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

INTEL CORP0 citations62
US11532724B2Dec 20, 2022

Selective gate spacers for semiconductor devices

INTEL CORP0 citations62
US9390932B2Jul 12, 2016

Electropositive metal containing layers for semiconductor applications

INTEL CORP2 citations62
US9090964B2Jul 28, 2015

Additives to improve the performance of a precursor source for cobalt deposition

INTEL CORP2 citations62
US11270887B2Mar 8, 2022

Passivation layer for germanium substrate

INTEL CORP0 citations60
US10756215B2Aug 25, 2020

Selective deposition utilizing sacrificial blocking layers for semiconductor devices

INTEL CORP0 citations52
US10464959B2Nov 5, 2019

Inherently selective precursors for deposition of second or third row transition metal thin films

INTEL CORP0 citations51
US10217646B2Feb 26, 2019

Transition metal dry etch by atomic layer removal of oxide layers for device fabrication

INTEL CORP0 citations51

ROMERO PATRICIO E

3 patents

BLACKWELL JAMES M

1 patent