Inventor
ROMERO PATRICIO E
US22 patents
⚠️ This page may combine multiple inventors who share the name “ROMERO PATRICIO E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
18 patentsUS9067958B2Jun 30, 2015
Scalable and high yield synthesis of transition metal bis-diazabutadienes
INTEL CORP79 citations97
US9932671B2Apr 3, 2018
Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)
INTEL CORP10 citations84
US9530733B2Dec 27, 2016
Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions
INTEL CORP8 citations84
US10243080B2Mar 26, 2019
Selective deposition utilizing sacrificial blocking layers for semiconductor devices
INTEL CORP3 citations73
US9455150B2Sep 27, 2016
Conformal thin film deposition of electropositive metal alloy films
INTEL CORP3 citations73
US11512098B2Nov 29, 2022
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
INTEL CORP3 citations72
US10971600B2Apr 6, 2021
Selective gate spacers for semiconductor devices
INTEL CORP1 citations72
US10396176B2Aug 27, 2019
Selective gate spacers for semiconductor devices
INTEL CORP3 citations72
US9786559B2Oct 10, 2017
Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs)
INTEL CORP3 citations69
US12344627B2Jul 1, 2025
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
INTEL CORP0 citations62
US11866453B2Jan 9, 2024
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
INTEL CORP0 citations62
US11532724B2Dec 20, 2022
Selective gate spacers for semiconductor devices
INTEL CORP0 citations62
US9390932B2Jul 12, 2016
Electropositive metal containing layers for semiconductor applications
INTEL CORP2 citations62
US9090964B2Jul 28, 2015
Additives to improve the performance of a precursor source for cobalt deposition
INTEL CORP2 citations62
US11270887B2Mar 8, 2022
Passivation layer for germanium substrate
INTEL CORP0 citations60
US10756215B2Aug 25, 2020
Selective deposition utilizing sacrificial blocking layers for semiconductor devices
INTEL CORP0 citations52
US10464959B2Nov 5, 2019
Inherently selective precursors for deposition of second or third row transition metal thin films
INTEL CORP0 citations51
US10217646B2Feb 26, 2019
Transition metal dry etch by atomic layer removal of oxide layers for device fabrication
INTEL CORP0 citations51
ROMERO PATRICIO E
3 patentsUS9236292B2Jan 12, 2016
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
ROMERO PATRICIO E125 citations98
US9583389B2Feb 28, 2017
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
ROMERO PATRICIO E7 citations83
US8952355B2Feb 10, 2015
Electropositive metal containing layers for semiconductor applications
ROMERO PATRICIO E2 citations61