Inventor
LIN YU-KU
TW34 patents
⚠️ This page may combine multiple inventors who share the name “LIN YU-KU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
21 patentsUS6099662AAug 8, 2000
Process for cleaning a semiconductor substrate after chemical-mechanical polishing
TAIWAN SEMICONDUCTOR MFG77 citations95
US6372645B1Apr 16, 2002
Methods to reduce metal bridges and line shorts in integrated circuits
TAIWAN SEMICONDUCTOR MFG22 citations92
US6531382B1Mar 11, 2003
Use of a capping layer to reduce particle evolution during sputter pre-clean procedures
TAIWAN SEMICONDUCTOR MFG16 citations83
US6551927B1Apr 22, 2003
CoSix process to improve junction leakage
TAIWAN SEMICONDUCTOR MFG13 citations81
US6626741B2Sep 30, 2003
Method for improving thickness uniformity on a semiconductor wafer during chemical mechanical polishing
TAIWAN SEMICONDUCTOR MFG7 citations74
US6248002B1Jun 19, 2001
Obtaining the better defect performance of the fuse CMP process by adding slurry polish on more soft pad after slurry polish
TAIWAN SEMICONDUCTOR MFG13 citations73
US6232043B1May 15, 2001
Rule to determine CMP polish time
TAIWAN SEMICONDUCTOR MFG9 citations73
US8815630B1Aug 26, 2014
Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods
TAIWAN SEMICONDUCTOR MFG5 citations72
US6769959B2Aug 3, 2004
Method and system for slurry usage reduction in chemical mechanical polishing
TAIWAN SEMICONDUCTOR MFG7 citations72
US7955993B2Jun 7, 2011
Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film deposition
TAIWAN SEMICONDUCTOR MFG2 citations62
US7368379B2May 6, 2008
Multi-layer interconnect structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG5 citations62
US6514673B2Feb 4, 2003
Rule to determine CMP polish time
TAIWAN SEMICONDUCTOR MFG4 citations62
US6352924B1Mar 5, 2002
Rework method for wafers that trigger WCVD backside alarm
TAIWAN SEMICONDUCTOR MFG5 citations62
US7128821B2Oct 31, 2006
Electropolishing method for removing particles from wafer surface
TAIWAN SEMICONDUCTOR MFG4 citations61
US7417321B2Aug 26, 2008
Via structure and process for forming the same
TAIWAN SEMICONDUCTOR MFG4 citations60
US7304728B2Dec 4, 2007
Test device and method for laser alignment calibration
TAIWAN SEMICONDUCTOR MFG3 citations60
US6863491B2Mar 8, 2005
Catch-pin water support for process chamber
TAIWAN SEMICONDUCTOR MFG4 citations59
US6695921B2Feb 24, 2004
Hoop support for semiconductor wafer
TAIWAN SEMICONDUCTOR MFG5 citations59
US6682605B2Jan 27, 2004
Apparatus and method for removing coating layers from alignment marks
TAIWAN SEMICONDUCTOR MFG4 citations57
US8642439B2Feb 4, 2014
Semiconductor device and method of formation
TAIWAN SEMICONDUCTOR MFG1 citations51
US7312149B2Dec 25, 2007
Copper plating of semiconductor devices using single intermediate low power immersion step
TAIWAN SEMICONDUCTOR MFG1 citations49
TAIWAN SEMICONDUCTOR MFG CO LTD
10 patentsUS10367021B2Jul 30, 2019
Image sensor device and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US11522001B2Dec 6, 2022
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10074594B2Sep 11, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12272708B2Apr 8, 2025
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10818716B2Oct 27, 2020
Image sensor device and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10867889B2Dec 15, 2020
Method of manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9991204B2Jun 5, 2018
Through via structure for step coverage improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9859124B2Jan 2, 2018
Method of manufacturing semiconductor device with recess
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9711454B2Jul 18, 2017
Through via structure for step coverage improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9601535B2Mar 21, 2017
Semiconducator image sensor having color filters formed over a high-K dielectric grid
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38