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Inventor

KANG SANG-CHUL

KR28 patents
⚠️ This page may combine multiple inventors who share the name “KANG SANG-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

17 patents
USD730911SJun 2, 2015

Memory card

SAMSUNG ELECTRONICS CO LTD15 citations84
US7949819B2May 24, 2011

Flash memory device and method of changing block size in the same using address shifting

SAMSUNG ELECTRONICS CO LTD7 citations84
US7218558B2May 15, 2007

Semiconductor memory devices having column redundancy circuits therein that support multiple memory blocks

SAMSUNG ELECTRONICS CO LTD10 citations84
US10380055B2Aug 13, 2019

Memory card having multi-row terminals

SAMSUNG ELECTRONICS CO LTD5 citations73
US9437313B2Sep 6, 2016

Non-volatile memory device and related read method using adjustable bit line connection signal

SAMSUNG ELECTRONICS CO LTD2 citations63
USD736775SAug 18, 2015

Memory card

SAMSUNG ELECTRONICS CO LTD2 citations63
USD736776SAug 18, 2015

Memory card

SAMSUNG ELECTRONICS CO LTD2 citations63
USD735725SAug 4, 2015

Memory card

SAMSUNG ELECTRONICS CO LTD2 citations63
USD730910SJun 2, 2015

Memory card

SAMSUNG ELECTRONICS CO LTD2 citations63
USD730907SJun 2, 2015

Memory card

SAMSUNG ELECTRONICS CO LTD2 citations63
USD730908SJun 2, 2015

Memory card

SAMSUNG ELECTRONICS CO LTD2 citations63
US7453713B2Nov 18, 2008

Dual chip package

SAMSUNG ELECTRONICS CO LTD2 citations63
US7272048B2Sep 18, 2007

Nonvolatile memory device controlling common source line for improving read characteristic

SAMSUNG ELECTRONICS CO LTD6 citations63
US7876613B2Jan 25, 2011

Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards

SAMSUNG ELECTRONICS CO LTD2 citations62
US7894258B2Feb 22, 2011

Flash memory device for determining most significant bit program

SAMSUNG ELECTRONICS CO LTD3 citations61
US7684241B2Mar 23, 2010

Flash memory devices having multi-page copyback functionality and related block replacement methods

SAMSUNG ELECTRONICS CO LTD4 citations61
US7508730B2Mar 24, 2009

Semiconductor memory devices having control circuitry to avoid recovering a charge pump when executing consecutive sections of a continuous operation command and methods of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations40

XEROX CORP

5 patents

KANG SANG CHUL

2 patents

YUN EUN-JIN

2 patents

IBM

2 patents