Inventor

YANG JONG-HO

KR19 patents

⚠️ This page may combine multiple inventors who share the name “YANG JONG-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG JONG-HO

SAMSUNG ELECTRONICS CO LTD

Method for forming silicon dioxide film using siloxane

Method of forming a thin film with a low hydrogen content on a semiconductor device

Method of fabricating metal silicate layer using atomic layer deposition technique

Methods for forming silicon dioxide layers on substrates using atomic layer deposition

Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the same

Content processing apparatus for processing high resolution content and content processing method thereof

Method of fabricating high-k dielectric layer having reduced impurity

Stress optimization in dual embedded epitaxially grown semiconductor processing

Electrode line structure having fine line width and method of forming the same

Method of forming fine patterns using silicon oxide layer

Information storage medium storing content, content providing method, content reproducing method and apparatus therefor

Apparatus and method for reproducing an optical recording, and computer-readable recording medium

Electrode line structure having fine line width and method of forming the same

Transistor formation using capping layer

Converting apparatus, contents converting method, and computer readable recording medium

Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processes

INFINEON TECHNOLOGIES AG

Methods of manufacturing semiconductor devices and structures thereof

LEE JAE GON

Integrated circuit system employing stress-engineered spacers

YANG JONG HO

Methods of forming p-channel field effect transistors having SiGe source/drain regions