Inventor
RAJASHEKHAR Adarsh
US68 patents
Patents
50 patentsUS10665581B1May 26, 2020
Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same
SANDISK TECHNOLOGIES LLC86 citations98
US10290648B1May 14, 2019
Three-dimensional memory device containing air gap rails and method of making thereof
SANDISK TECHNOLOGIES LLC71 citations98
US10283513B1May 7, 2019
Three-dimensional memory device with annular blocking dielectrics and method of making thereof
SANDISK TECHNOLOGIES LLC82 citations98
US10276583B2Apr 30, 2019
Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof
SANDISK TECHNOLOGIES LLC51 citations98
US10937809B1Mar 2, 2021
Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof
SANDISK TECHNOLOGIES LLC25 citations94
US10804291B1Oct 13, 2020
Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same
SANDISK TECHNOLOGIES LLC22 citations94
US10651196B1May 12, 2020
Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same
SANDISK TECHNOLOGIES LLC33 citations94
US10529620B2Jan 7, 2020
Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC23 citations94
US10381559B1Aug 13, 2019
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
SANDISK TECHNOLOGIES LLC46 citations94
US10381409B1Aug 13, 2019
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
SANDISK TECHNOLOGIES LLC35 citations94
US10290652B1May 14, 2019
Three-dimensional memory device with graded word lines and methods of making the same
SANDISK TECHNOLOGIES LLC22 citations94
US11482539B2Oct 25, 2022
Three-dimensional memory device including metal silicide source regions and methods for forming the same
SANDISK TECHNOLOGIES LLC11 citations86
US11177280B1Nov 16, 2021
Three-dimensional memory device including wrap around word lines and methods of forming the same
SANDISK TECHNOLOGIES LLC13 citations86
US11127728B2Sep 21, 2021
Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same
SANDISK TECHNOLOGIES LLC9 citations86
US11049880B2Jun 29, 2021
Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
SANDISK TECHNOLOGIES LLC15 citations86
US10868025B2Dec 15, 2020
Three-dimensional memory device including replacement crystalline channels and methods of making the same
SANDISK TECHNOLOGIES LLC13 citations86
US10790300B2Sep 29, 2020
Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
SANDISK TECHNOLOGIES LLC12 citations86
US10756110B1Aug 25, 2020
Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same
SANDISK TECHNOLOGIES LLC14 citations86
US10615123B2Apr 7, 2020
Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same
SANDISK TECHNOLOGIES LLC11 citations85
US11201139B2Dec 14, 2021
Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same
SANDISK TECHNOLOGIES LLC7 citations84
US10797061B2Oct 6, 2020
Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
SANDISK TECHNOLOGIES LLC10 citations84
US11239253B2Feb 1, 2022
Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
SANDISK TECHNOLOGIES LLC6 citations75
US11996462B2May 28, 2024
Ferroelectric field effect transistors having enhanced memory window and methods of making the same
SANDISK TECHNOLOGIES LLC2 citations73
US11948902B2Apr 2, 2024
Bonded assembly including an airgap containing bonding-level dielectric layer and methods of forming the same
SANDISK TECHNOLOGIES LLC2 citations73
US11631695B2Apr 18, 2023
Three-dimensional memory device containing composite word lines containing metal and silicide and method of making thereof
SANDISK TECHNOLOGIES LLC2 citations73
US11569260B2Jan 31, 2023
Three-dimensional memory device including discrete memory elements and method of making the same
SANDISK TECHNOLOGIES LLC2 citations73
US11527500B2Dec 13, 2022
Semiconductor structure containing multilayer bonding pads and methods of forming the same
SANDISK TECHNOLOGIES LLC4 citations73
US11521984B2Dec 6, 2022
Three-dimensional memory device containing low resistance source-level contact and method of making thereof
SANDISK TECHNOLOGIES LLC2 citations73
US11437270B2Sep 6, 2022
Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC2 citations73
US11424265B2Aug 23, 2022
Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
SANDISK TECHNOLOGIES LLC2 citations73
US11309332B2Apr 19, 2022
Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof
SANDISK TECHNOLOGIES LLC3 citations73
US11309301B2Apr 19, 2022
Stacked die assembly including double-sided inter-die bonding connections and methods of forming the same
SANDISK TECHNOLOGIES LLC3 citations73
US11302716B2Apr 12, 2022
Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same
SANDISK TECHNOLOGIES LLC3 citations73
US11282848B2Mar 22, 2022
Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same
SANDISK TECHNOLOGIES LLC3 citations73
US11239254B2Feb 1, 2022
Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
SANDISK TECHNOLOGIES LLC3 citations73
US11217532B2Jan 4, 2022
Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same
SANDISK TECHNOLOGIES LLC4 citations73
US11145628B1Oct 12, 2021
Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same
SANDISK TECHNOLOGIES LLC6 citations73
US11121140B2Sep 14, 2021
Ferroelectric tunnel junction memory device with integrated ovonic threshold switches
SANDISK TECHNOLOGIES LLC4 citations73
US11114534B2Sep 7, 2021
Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same
SANDISK TECHNOLOGIES LLC3 citations73
US11024648B2Jun 1, 2021
Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same
SANDISK TECHNOLOGIES LLC6 citations73
US10797060B2Oct 6, 2020
Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
SANDISK TECHNOLOGIES LLC5 citations73
US12317502B2May 27, 2025
Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same
SANDISK TECHNOLOGIES LLC1 citations64
US12581652B2Mar 17, 2026
Three-dimensional memory devices having channel cap structures and methods for forming the same
SANDISK TECHNOLOGIES LLC0 citations63
US12137554B2Nov 5, 2024
Three-dimensional memory device with word-line etch stop liners and method of making thereof
SANDISK TECHNOLOGIES LLC0 citations63
US12137565B2Nov 5, 2024
Three-dimensional memory device with vertical word line barrier and methods for forming the same
SANDISK TECHNOLOGIES LLC0 citations63
US11594553B2Feb 28, 2023
Three-dimensional ferroelectric memory device containing lattice-matched templates and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations63
US12289889B2Apr 29, 2025
Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof
SANDISK TECHNOLOGIES LLC0 citations62
US11545506B2Jan 3, 2023
Ferroelectric field effect transistors having enhanced memory window and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations62
US12484222B2Nov 25, 2025
Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening
SANDISK TECHNOLOGIES LLC0 citations61
US12243776B2Mar 4, 2025
Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings
SANDISK TECHNOLOGIES LLC0 citations61
Showing the top 50 of 68 patents by PatentIndex Score.