Inventor
JEONG GI-TAE
KR14 patents
⚠️ This page may combine multiple inventors who share the name “JEONG GI-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS7830705B2Nov 9, 2010
Multi-level phase change memory device and related methods
SAMSUNG ELECTRONICS CO LTD39 citations92
US7164598B2Jan 16, 2007
Methods of operating magnetic random access memory device using spin injection and related devices
SAMSUNG ELECTRONICS CO LTD25 citations92
US6917551B2Jul 12, 2005
Memory devices, sense amplifiers, and methods of operation thereof using voltage-dependent capacitor pre-amplification
SAMSUNG ELECTRONICS CO LTD12 citations83
US6066556AMay 23, 2000
Methods of fabricating conductive lines in integrated circuits using insulating sidewall spacers and conductive lines so fabricated
SAMSUNG ELECTRONICS CO LTD16 citations83
US7940552B2May 10, 2011
Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
SAMSUNG ELECTRONICS CO LTD9 citations82
US7843741B2Nov 30, 2010
Memory devices with selective pre-write verification and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD6 citations73
US7804703B2Sep 28, 2010
Phase change memory device having Schottky diode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US7569401B2Aug 4, 2009
Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US8050083B2Nov 1, 2011
Phase change memory device and write method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US6903989B2Jun 7, 2005
Data sensing circuits and methods for magnetic memory devices
SAMSUNG ELECTRONICS CO LTD5 citations62
US9385809B2Jul 5, 2016
Optical interface module for coherent reception, optical memory module, and optical memory system comprising same
SAMSUNG ELECTRONICS CO LTD0 citations41
US8043924B2Oct 25, 2011
Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations41