Inventor
LU WEI-HAO
TW23 patents
⚠️ This page may combine multiple inventors who share the name “LU WEI-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS10453943B2Oct 22, 2019
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11600715B2Mar 7, 2023
FETs and methods of forming FETs
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11205713B2Dec 21, 2021
FinFET having a non-faceted top surface portion for a source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10340190B2Jul 2, 2019
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12349426B2Jul 1, 2025
Source/drain device and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12237230B2Feb 25, 2025
Semiconductor device with leakage current suppression and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12439651B2Oct 7, 2025
Integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402344B2Aug 26, 2025
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363989B2Jul 15, 2025
Semiconductor device with leakage current suppression and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990511B2May 21, 2024
Source/drain device and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11688793B2Jun 27, 2023
Integrated circuit structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12457770B2Oct 28, 2025
Source and drain engineering process for multigate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12389671B2Aug 12, 2025
Source/drain regions of semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191369B2Jan 7, 2025
Source and drain engineering process for multigate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11804487B2Oct 31, 2023
Source/drain regions of semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11296080B2Apr 5, 2022
Source/drain regions of semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12568648B2Mar 3, 2026
Backside source/drain contacts and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11532750B2Dec 20, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10861935B2Dec 8, 2020
Semiconductor device source/drain region with arsenic-containing barrier region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10374038B2Aug 6, 2019
Semiconductor device source/drain region with arsenic-containing barrier region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50