P

Inventor

LU WEI-HAO

TW23 patents
⚠️ This page may combine multiple inventors who share the name “LU WEI-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

20 patents
US10453943B2Oct 22, 2019

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11600715B2Mar 7, 2023

FETs and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11205713B2Dec 21, 2021

FinFET having a non-faceted top surface portion for a source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10340190B2Jul 2, 2019

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12349426B2Jul 1, 2025

Source/drain device and method of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12237230B2Feb 25, 2025

Semiconductor device with leakage current suppression and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12439651B2Oct 7, 2025

Integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402344B2Aug 26, 2025

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363989B2Jul 15, 2025

Semiconductor device with leakage current suppression and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990511B2May 21, 2024

Source/drain device and method of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11688793B2Jun 27, 2023

Integrated circuit structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12457770B2Oct 28, 2025

Source and drain engineering process for multigate devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12389671B2Aug 12, 2025

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191369B2Jan 7, 2025

Source and drain engineering process for multigate devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11804487B2Oct 31, 2023

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11296080B2Apr 5, 2022

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12568648B2Mar 3, 2026

Backside source/drain contacts and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11532750B2Dec 20, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10861935B2Dec 8, 2020

Semiconductor device source/drain region with arsenic-containing barrier region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10374038B2Aug 6, 2019

Semiconductor device source/drain region with arsenic-containing barrier region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

UNIV CHUNG YUAN CHRISTIAN

2 patents

WISTRON NEWEB CORP

1 patent