Inventor
NG TUOH-BIN
TW14 patents
⚠️ This page may combine multiple inventors who share the name “NG TUOH-BIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
10 patentsUS9953875B1Apr 24, 2018
Contact resistance control in epitaxial structures of finFET
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations92
US10170370B2Jan 1, 2019
Contact resistance control in epitaxial structures of finFET
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations82
US11823949B2Nov 21, 2023
FinFet with source/drain regions comprising an insulator layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11004725B2May 11, 2021
Method of forming a FinFET device with gaps in the source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10340190B2Jul 2, 2019
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12469744B2Nov 11, 2025
Method for forming FinFET with source/drain regions comprising an insulator layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243784B2Mar 4, 2025
Silicon phosphide semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749567B2Sep 5, 2023
Silicon phosphide semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069578B2Jul 20, 2021
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991630B2Apr 27, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51