Inventor

SU LI-LI

TW55 patents

Patents

50 patents

US9831116B2Nov 28, 2017

Methods of forming transistor source/drain regions comprising carbon liner layers

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64

US12349426B2Jul 1, 2025

Source/drain device and method of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64

US12336237B2Jun 17, 2025

Source/drain regions of semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64

US12237230B2Feb 25, 2025

Semiconductor device with leakage current suppression and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US12154974B2Nov 26, 2024

Source/drain formation with reduced selective loss defects

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11855188B2Dec 26, 2023

Source/drain formation with reduced selective loss defects

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12439651B2Oct 7, 2025

Integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12437990B2Oct 7, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12402344B2Aug 26, 2025

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12363989B2Jul 15, 2025

Semiconductor device with leakage current suppression and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12243931B2Mar 4, 2025

Source/drain epitaxial layers for transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12074071B2Aug 27, 2024

Source/drain structures and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11990511B2May 21, 2024

Source/drain device and method of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11961912B2Apr 16, 2024

Merged source/drain features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11688793B2Jun 27, 2023

Integrated circuit structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11600534B2Mar 7, 2023

Source/drain structures and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11527650B2Dec 13, 2022

FinFET device having a source/drain region with a multi-sloped undersurface

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11127637B2Sep 21, 2021

Semiconductor device convex source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11018224B2May 25, 2021

Semiconductor device with epitaxial source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11004745B2May 11, 2021

Semiconductor device convex source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US10991795B2Apr 27, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12396242B2Aug 19, 2025

Nano-structure transistors with air inner spacers and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12389671B2Aug 12, 2025

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12302615B2May 13, 2025

Epitaxial structures exposed in airgaps for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US11923409B2Mar 5, 2024

Epitaxial structures exposed in airgaps for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US11804487B2Oct 31, 2023

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US11296080B2Apr 5, 2022

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12557367B2Feb 17, 2026

Source/drain regions formed using metal containing block masks

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60

US12532518B2Jan 20, 2026

Transistor source/drain regions and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60

US12243783B2Mar 4, 2025

Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60

US12396209B2Aug 19, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57

US12568648B2Mar 3, 2026

Backside source/drain contacts and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US12255255B2Mar 18, 2025

Method of manufacturing a FinFET with merged epitaxial source/drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US12132118B2Oct 29, 2024

Semiconductor device having a multilayer source/drain region and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US11677013B2Jun 13, 2023

Source/drain epitaxial layers for transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US11532750B2Dec 20, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

Showing the top 50 of 55 patents by PatentIndex Score.

SU LI-LI

Patents

FETS and methods of forming FETs

Semiconductor device with epitaxial source/drain

Semiconductor device convex source/drain region

FETS and methods of forming FETS

FETS and methods of forming FETS

Source/drain formation with reduced selective loss defects

Merged source/drain features

Merged source/drain features

Fin field-effect transistor device and method of forming the same

Semiconductor device and manufacturing method thereof

FETS and methods of forming FETS

FETs and methods of forming FETs

FinFET having a non-faceted top surface portion for a source/drain region

Semiconductor device structure and method for forming the same

Methods of forming transistor source/drain regions comprising carbon liner layers

Source/drain device and method of forming thereof

Source/drain regions of semiconductor device and method of forming the same

Semiconductor device with leakage current suppression and method for forming the same

Source/drain formation with reduced selective loss defects

Source/drain formation with reduced selective loss defects

Integrated circuit structure

Semiconductor device and method of manufacture

FETS and methods of forming FETS

Semiconductor device with leakage current suppression and method for forming the same

Source/drain epitaxial layers for transistors

Source/drain structures and method of forming

Source/drain device and method of forming thereof

Merged source/drain features

Integrated circuit structure and manufacturing method thereof

Source/drain structures and method of forming

FinFET device having a source/drain region with a multi-sloped undersurface

Semiconductor device convex source/drain region

Semiconductor device with epitaxial source/drain

Semiconductor device convex source/drain region

Semiconductor device and manufacturing method thereof

Nano-structure transistors with air inner spacers and methods forming same

Source/drain regions of semiconductor devices and methods of forming the same

Epitaxial structures exposed in airgaps for semiconductor devices

Epitaxial structures exposed in airgaps for semiconductor devices

Source/drain regions of semiconductor devices and methods of forming the same

Source/drain regions of semiconductor devices and methods of forming the same

Source/drain regions formed using metal containing block masks

Transistor source/drain regions and methods of forming the same

Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom

Semiconductor device and method

Backside source/drain contacts and methods of forming the same

Method of manufacturing a FinFET with merged epitaxial source/drain regions

Semiconductor device having a multilayer source/drain region and methods of manufacture

Source/drain epitaxial layers for transistors

Semiconductor device and method of manufacture