Inventor

SUMANT ANIRUDHA V

US36 patents

⚠️ This page may combine multiple inventors who share the name “SUMANT ANIRUDHA V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMANT ANIRUDHA V

UCHICAGO ARGONNE LLC

All 2D, high mobility, flexible, transparent thin film transistor

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

Low friction wear resistant graphene films

Superlubricating graphene and graphene oxide films

Transparent nanocrystalline diamond coatings and devices

Low friction wear resistant graphene films

Systems and methods for designing new materials for superlubricity

Superlubrious high temperature coatings

Low friction wear resistant graphene films

Superlubricating graphene and graphene oxide films

Transparent nanocrystalline diamond coatings and devices

Piezoresistive boron doped diamond nanowire

Graphene layer formation on a carbon based substrate

Robust superlubricity with steel surfaces in sliding contacts

Low friction coatings

Advanced oxidation process for the exfoliation of two dimensional matertals

Nanowire and micro wire fabrication technique and product

Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

Piezoresistive boron doped diamond nanowire

Low friction wear resistant graphene films

Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Thermally conductive lithium ion electrodes and batteries

Systems and methods for forming diamond heterojunction junction devices

Nanowire and microwire fabrication technique and product

Ultrananocrystalline diamond contacts for electronic devices

Ultrananocrystalline diamond contacts for electronic devices

Low-stress doped ultrananocrystalline diamond

Method to fabricate portable electron source based on nitrogen incorporated ultrananocrystalline diamond (N-UNCD)

Direct synthesis of reduced graphene oxide films on dielectric substrates

SUMANT ANIRUDHA V

Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Graphene layer formation on a carbon based substrate

Simple method to fabricate nano-porous diamond membranes

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

GOLDSMITH CHARLES L

Electrostatic MEMS devices with high reliability

RF-MEMS capacitive switches with high reliability

US ENERGY

Method to create hydrophilic antimicrobial diamond coating