P

Inventor

SHIRAHATA MASAYOSHI

JP22 patents
⚠️ This page may combine multiple inventors who share the name “SHIRAHATA MASAYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

14 patents
US6461920B1Oct 8, 2002

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP124 citations98
US6144079ANov 7, 2000

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP62 citations96
US6521963B1Feb 18, 2003

Semiconductor device and method of manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP37 citations92
US6333222B1Dec 25, 2001

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP31 citations92
US5683923ANov 4, 1997

Semiconductor memory device capable of electrically erasing and writing information and a manufacturing method of the same

MITSUBISHI ELECTRIC CORP25 citations92
US5594264AJan 14, 1997

LDD semiconductor device with peak impurity concentrations

MITSUBISHI ELECTRIC CORP32 citations92
US6335556B1Jan 1, 2002

Semiconductor device and method for manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP13 citations74
US6163046ADec 19, 2000

Semiconductor device and method of fabricating semiconductor device

MITSUBISHI ELECTRIC CORP8 citations74
US5488245AJan 30, 1996

Semiconductor memory device capable of electrically erasing and writing information

MITSUBISHI ELECTRIC CORP11 citations74
US6248653B1Jun 19, 2001

Method of manufacturing gate structure

MITSUBISHI ELECTRIC CORP11 citations73
US6417555B1Jul 9, 2002

Semiconductor device and manufacturing method therefor

MITSUBISHI ELECTRIC CORP9 citations72
US6521517B1Feb 18, 2003

Method of fabricating a gate electrode using a second conductive layer as a mask in the formation of an insulating layer by oxidation of a first conductive layer

MITSUBISHI ELECTRIC CORP3 citations62
US6525380B2Feb 25, 2003

CMOS with a fixed charge in the gate dielectric

MITSUBISHI ELECTRIC CORP6 citations57
US6555887B1Apr 29, 2003

Semiconductor device with multi-layer interconnection

MITSUBISHI ELECTRIC CORP0 citations51

BRILLNICS JAPAN INC

4 patents

RENESAS TECH CORP

3 patents

BRILLNICS INC

1 patent