Inventor
CHO CHOONG-RAE
KR22 patents
⚠️ This page may combine multiple inventors who share the name “CHO CHOONG-RAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS8043926B2Oct 25, 2011
Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD48 citations98
US7842991B2Nov 30, 2010
Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD99 citations98
US7491987B2Feb 17, 2009
Junction field effect thin film transistor
SAMSUNG ELECTRONICS CO LTD56 citations97
US7417271B2Aug 26, 2008
Electrode structure having at least two oxide layers and non-volatile memory device having the same
SAMSUNG ELECTRONICS CO LTD97 citations97
US7498600B2Mar 3, 2009
Variable resistance random access memory device and a method of fabricating the same
SAMSUNG ELECTRONICS CO LTD63 citations96
US7361554B2Apr 22, 2008
Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
SAMSUNG ELECTRONICS CO LTD15 citations84
US7414295B2Aug 19, 2008
Transistor and method of operating transistor
SAMSUNG ELECTRONICS CO LTD8 citations74
US7256447B2Aug 14, 2007
Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
SAMSUNG ELECTRONICS CO LTD9 citations74
US7638361B2Dec 29, 2009
Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines
SAMSUNG ELECTRONICS CO LTD1 citations52
US7439566B2Oct 21, 2008
Semiconductor memory device having metal-insulator transition film resistor
SAMSUNG ELECTRONICS CO LTD0 citations52
US7250649B2Jul 31, 2007
Capacitor of a memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US9685527B2Jun 20, 2017
Methods of forming metal silicide layers including dopant segregation
SAMSUNG ELECTRONICS CO LTD0 citations51
US7859035B2Dec 28, 2010
Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
CHO CHOONG-RAE
3 patentsUS9735016B2Aug 15, 2017
Semiconductor device, method of fabricating the same, and apparatus used in fabrication thereof
CHO CHOONG-RAE4 citations71
US8125021B2Feb 28, 2012
Non-volatile memory devices including variable resistance material
CHO CHOONG-RAE3 citations60
US8455854B2Jun 4, 2013
Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same
CHO CHOONG-RAE0 citations51