Inventor
NIWA MASAAKI
JP37 patents
⚠️ This page may combine multiple inventors who share the name “NIWA MASAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
23 patentsUS6033928AMar 7, 2000
Method of manufacturing aggregate of semiconductor micro-needles
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations99
US5739544AApr 14, 1998
Quantization functional device utilizing a resonance tunneling effect and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD139 citations98
US6087197AJul 11, 2000
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US5543351AAug 6, 1996
Method of producing electrically insulated silicon structure
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD86 citations96
US5296719AMar 22, 1994
Quantum device and fabrication method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD51 citations96
US5244828ASep 14, 1993
Method of fabricating a quantum device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD59 citations95
US6177291B1Jan 23, 2001
Method of making aggregate of semiconductor micro-needles
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US5486706AJan 23, 1996
Quantization functional device utilizing a resonance tunneling effect and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US5347140ASep 13, 1994
Resonant electron transfer device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD51 citations92
US6955973B2Oct 18, 2005
Method for forming a semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6559518B1May 6, 2003
MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6273959B1Aug 14, 2001
Method of cleaning semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations82
US5405454AApr 11, 1995
Electrically insulated silicon structure and producing method therefor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations82
US6734451B2May 11, 2004
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US6489629B1Dec 3, 2002
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations74
US5886389AMar 23, 1999
Field-effect transistor and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US5562802AOct 8, 1996
Method of producing a quantum device which utilizes the quantum effect
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US5480492AJan 2, 1996
Method for removing organic or inorganic contaminant from silicon substrate surface
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations74
US5444267AAug 22, 1995
Quantum device utilizing the quantum effect
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6812101B2Nov 2, 2004
Semiconductor device and method for manufacture thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5514614AMay 7, 1996
Method for producing quantization functional device utilizing a resonance tunneling effect
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations71
US5422306AJun 6, 1995
Method of forming semiconductor hetero interfaces
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations70
US5182452AJan 26, 1993
Method for determining the presence of thin insulating films
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations62
UNIV TOHOKU
8 patentsUS11258006B2Feb 22, 2022
Magnetic memory element, method for producing same, and magnetic memory
UNIV TOHOKU0 citations62
US11062876B2Jul 13, 2021
Evaluation method and evaluation apparatus for electronic device
UNIV TOHOKU0 citations62
US11121310B2Sep 14, 2021
Spin electronics element and method of manufacturing thereof
UNIV TOHOKU0 citations61
US10424725B2Sep 24, 2019
Spintronics element
UNIV TOHOKU0 citations51
US10396274B2Aug 27, 2019
Spin electronics element and method of manufacturing thereof
UNIV TOHOKU0 citations51
US10658572B2May 19, 2020
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations50
US10164174B2Dec 25, 2018
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU1 citations50
US10644234B2May 5, 2020
Method for producing magnetic memory comprising magnetic tunnel junction element
UNIV TOHOKU0 citations42
PANASONIC CORP
2 patentsUS7554156B2Jun 30, 2009
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
PANASONIC CORP2 citations63
US7956413B2Jun 7, 2011
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
PANASONIC CORP1 citations52