P

Inventor

TAK YONG-SUK

KR34 patents
⚠️ This page may combine multiple inventors who share the name “TAK YONG-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US9991257B2Jun 5, 2018

Semiconductor device having fin active regions and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD30 citations93
US9142558B2Sep 22, 2015

Semiconductor device having supporter and method of forming the same

SAMSUNG ELECTRONICS CO LTD20 citations91
US10153277B2Dec 11, 2018

Integrated circuit device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US10096688B2Oct 9, 2018

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US10008575B2Jun 26, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US9859393B2Jan 2, 2018

Integrated circuit device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US9929160B1Mar 27, 2018

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD17 citations83
US9553141B2Jan 24, 2017

Semiconductor device having supporter

SAMSUNG ELECTRONICS CO LTD10 citations83
US8343844B2Jan 1, 2013

Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured thereby

SAMSUNG ELECTRONICS CO LTD11 citations83
US9577075B2Feb 21, 2017

Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method

SAMSUNG ELECTRONICS CO LTD6 citations82
US10403739B2Sep 3, 2019

Method for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations80
US10460927B2Oct 29, 2019

Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor

SAMSUNG ELECTRONICS CO LTD2 citations73
US9984925B2May 29, 2018

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US9887080B2Feb 6, 2018

Method of forming SiOCN material layer and method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9559185B2Jan 31, 2017

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US8357613B2Jan 22, 2013

Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing

SAMSUNG ELECTRONICS CO LTD6 citations73
US10685957B2Jun 16, 2020

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10026736B2Jul 17, 2018

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10176989B2Jan 8, 2019

Method of manufacturing integrated circuit device

SAMSUNG ELECTRONICS CO LTD3 citations70
US9837500B2Dec 5, 2017

Semiconductor devices including source/drain regions having silicon carbon

SAMSUNG ELECTRONICS CO LTD6 citations70
US12453078B2Oct 21, 2025

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12342588B2Jun 24, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations58
US10529555B2Jan 7, 2020

Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor

SAMSUNG ELECTRONICS CO LTD0 citations52
US7781819B2Aug 24, 2010

Semiconductor devices having a contact plug and fabrication methods thereof

SAMSUNG ELECTRONICS CO LTD1 citations52
US9825153B2Nov 21, 2017

Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method

SAMSUNG ELECTRONICS CO LTD0 citations51
US9728644B2Aug 8, 2017

Semiconductor device including field effect transistors

SAMSUNG ELECTRONICS CO LTD1 citations51
US12439646B2Oct 7, 2025

Oxide semiconductor device comprising oxygen vacancies

SAMSUNG ELECTRONICS CO LTD0 citations49
US10861695B2Dec 8, 2020

Method of forming a low-k layer and method of forming a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations49
US12426312B2Sep 23, 2025

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations47
US12213304B2Jan 28, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations47

KIM WAN-DON

2 patents

TAK YONG SUK

1 patent

KUH BONG JIN

1 patent