Inventor
LEE TAE-JONG
KR48 patents
⚠️ This page may combine multiple inventors who share the name “LEE TAE-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
17 patentsUS6348385B1Feb 19, 2002
Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant
CHARTERED SEMICONDUCTOR MFG128 citations97
US7094669B2Aug 22, 2006
Structure and method of liner air gap formation
CHARTERED SEMICONDUCTOR MFG46 citations92
US6613652B2Sep 2, 2003
Method for fabricating SOI devices with option of incorporating air-gap feature for better insulation and performance
CHARTERED SEMICONDUCTOR MFG28 citations92
US6387747B1May 14, 2002
Method to fabricate RF inductors with minimum area
CHARTERED SEMICONDUCTOR MFG57 citations92
US6376360B1Apr 23, 2002
Effective retardation of fluorine radical attack on metal lines via use of silicon rich oxide spacers
CHARTERED SEMICONDUCTOR MFG20 citations92
US6355563B1Mar 12, 2002
Versatile copper-wiring layout design with low-k dielectric integration
CHARTERED SEMICONDUCTOR MFG46 citations92
US6319767B1Nov 20, 2001
Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique
CHARTERED SEMICONDUCTOR MFG50 citations92
US6284590B1Sep 4, 2001
Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors
CHARTERED SEMICONDUCTOR MFG29 citations91
US7224060B2May 29, 2007
Integrated circuit with protective moat
CHARTERED SEMICONDUCTOR MFG25 citations89
US7253097B2Aug 7, 2007
Integrated circuit system using dual damascene process
CHARTERED SEMICONDUCTOR MFG11 citations84
US6468880B1Oct 22, 2002
Method for fabricating complementary silicon on insulator devices using wafer bonding
CHARTERED SEMICONDUCTOR MFG14 citations84
US7585768B2Sep 8, 2009
Combined copper plating method to improve gap fill
CHARTERED SEMICONDUCTOR MFG14 citations82
US6849928B2Feb 1, 2005
Dual silicon-on-insulator device wafer die
CHARTERED SEMICONDUCTOR MFG6 citations74
US6432797B1Aug 13, 2002
Simplified method to reduce or eliminate STI oxide divots
CHARTERED SEMICONDUCTOR MFG13 citations74
US6967156B2Nov 22, 2005
Method to fabricate aligned dual damascene openings
CHARTERED SEMICONDUCTOR MFG3 citations62
US7276440B2Oct 2, 2007
Method of fabrication of a die oxide ring
CHARTERED SEMICONDUCTOR MFG2 citations61
US7372156B2May 13, 2008
Method to fabricate aligned dual damascene openings
CHARTERED SEMICONDUCTOR MFG0 citations51
SAMSUNG ELECTRONICS CO LTD
15 patentsUS10153277B2Dec 11, 2018
Integrated circuit device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US10096688B2Oct 9, 2018
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US9859393B2Jan 2, 2018
Integrated circuit device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US10074717B2Sep 11, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations83
US9490258B2Nov 8, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations79
US10460927B2Oct 29, 2019
Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor
SAMSUNG ELECTRONICS CO LTD2 citations73
US10622444B2Apr 14, 2020
FinFET semiconductor device with a dummy gate, first gate spacer and second gate spacer
SAMSUNG ELECTRONICS CO LTD2 citations72
US12507448B2Dec 23, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11610966B2Mar 21, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11515390B2Nov 29, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11271110B2Mar 8, 2022
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11061052B2Jul 13, 2021
Probe including an alignment key protruded from a side of an alignment beam and a probe card including the same
SAMSUNG ELECTRONICS CO LTD1 citations55
US10529555B2Jan 7, 2020
Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor
SAMSUNG ELECTRONICS CO LTD0 citations52
US10770467B2Sep 8, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US10163913B2Dec 25, 2018
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations48