P

Inventor

KOO BON-YOUNG

KR71 patents
⚠️ This page may combine multiple inventors who share the name “KOO BON-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

26 patents
US6385020B1May 7, 2002

Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby

SAMSUNG ELECTRONICS CO LTD69 citations96
US6251746B1Jun 26, 2001

Methods of forming trench isolation regions having stress-reducing nitride layers therein

SAMSUNG ELECTRONICS CO LTD66 citations94
US9153692B2Oct 6, 2015

Semiconductor device having a stress film on a side surface of a fin

SAMSUNG ELECTRONICS CO LTD40 citations93
US5677234AOct 14, 1997

Methods of forming isolated semiconductor device active regions

SAMSUNG ELECTRONICS CO LTD24 citations92
US10388791B2Aug 20, 2019

Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US10096688B2Oct 9, 2018

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US9859387B2Jan 2, 2018

Semiconductor device having contact plugs

SAMSUNG ELECTRONICS CO LTD9 citations84
US9859393B2Jan 2, 2018

Integrated circuit device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US9853111B2Dec 26, 2017

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations84
US7419918B2Sep 2, 2008

Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices

SAMSUNG ELECTRONICS CO LTD13 citations84
US6214688B1Apr 10, 2001

Methods of forming integrated circuit capacitors having U-shaped electrodes

SAMSUNG ELECTRONICS CO LTD19 citations84
US10460927B2Oct 29, 2019

Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor

SAMSUNG ELECTRONICS CO LTD2 citations73
US9735158B2Aug 15, 2017

Semiconductor devices having bridge layer and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9559185B2Jan 31, 2017

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US9390977B2Jul 12, 2016

Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation

SAMSUNG ELECTRONICS CO LTD5 citations73
US9275995B2Mar 1, 2016

Semiconductor devices having composite spacers containing different dielectric materials

SAMSUNG ELECTRONICS CO LTD6 citations73
US6838719B2Jan 4, 2005

Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces

SAMSUNG ELECTRONICS CO LTD10 citations73
US9608117B2Mar 28, 2017

Semiconductor devices including a finFET

SAMSUNG ELECTRONICS CO LTD4 citations72
US10685957B2Jun 16, 2020

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10026736B2Jul 17, 2018

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US8008214B2Aug 30, 2011

Method of forming an insulation structure and method of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US10727348B2Jul 28, 2020

Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US8008154B2Aug 30, 2011

Methods of forming impurity containing insulating films and flash memory devices including the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7893482B2Feb 22, 2011

Semiconductor devices having tunnel and gate insulating layers

SAMSUNG ELECTRONICS CO LTD3 citations62
US7608509B2Oct 27, 2009

Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer

SAMSUNG ELECTRONICS CO LTD6 citations62
US7585729B2Sep 8, 2009

Method of manufacturing a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD6 citations62

LG ELECTRONICS INC

7 patents

KIM SEOK-HOON

2 patents

KIM MYUNG-SOO

2 patents

PARK YOO-MIN

2 patents

KIM JIN-GYUN

1 patent

KIM SOO JONG

1 patent

KIM JIN-BUM

1 patent

SAMSUNG ELECTRONICS CO INC

1 patent

SAMSUNG ELECTRO MECH

1 patent

YOO JEONG-HO

1 patent

KIM JIN BUM

1 patent

CHOI KYUNG-IN

1 patent

TAK YONG SUK

1 patent

SPIGEN KOREA CO LTD

1 patent

BAEK SUNG-KWEON

1 patent

Showing the top 50 of 71 patents by PatentIndex Score.