Inventor
KOO BON-YOUNG
KR71 patents
⚠️ This page may combine multiple inventors who share the name “KOO BON-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
26 patentsUS6385020B1May 7, 2002
Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD69 citations96
US6251746B1Jun 26, 2001
Methods of forming trench isolation regions having stress-reducing nitride layers therein
SAMSUNG ELECTRONICS CO LTD66 citations94
US9153692B2Oct 6, 2015
Semiconductor device having a stress film on a side surface of a fin
SAMSUNG ELECTRONICS CO LTD40 citations93
US5677234AOct 14, 1997
Methods of forming isolated semiconductor device active regions
SAMSUNG ELECTRONICS CO LTD24 citations92
US10388791B2Aug 20, 2019
Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US10096688B2Oct 9, 2018
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US9859387B2Jan 2, 2018
Semiconductor device having contact plugs
SAMSUNG ELECTRONICS CO LTD9 citations84
US9859393B2Jan 2, 2018
Integrated circuit device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US9853111B2Dec 26, 2017
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations84
US7419918B2Sep 2, 2008
Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices
SAMSUNG ELECTRONICS CO LTD13 citations84
US6214688B1Apr 10, 2001
Methods of forming integrated circuit capacitors having U-shaped electrodes
SAMSUNG ELECTRONICS CO LTD19 citations84
US10460927B2Oct 29, 2019
Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor
SAMSUNG ELECTRONICS CO LTD2 citations73
US9735158B2Aug 15, 2017
Semiconductor devices having bridge layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9559185B2Jan 31, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US9390977B2Jul 12, 2016
Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation
SAMSUNG ELECTRONICS CO LTD5 citations73
US9275995B2Mar 1, 2016
Semiconductor devices having composite spacers containing different dielectric materials
SAMSUNG ELECTRONICS CO LTD6 citations73
US6838719B2Jan 4, 2005
Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces
SAMSUNG ELECTRONICS CO LTD10 citations73
US9608117B2Mar 28, 2017
Semiconductor devices including a finFET
SAMSUNG ELECTRONICS CO LTD4 citations72
US10685957B2Jun 16, 2020
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10026736B2Jul 17, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US8008214B2Aug 30, 2011
Method of forming an insulation structure and method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US10727348B2Jul 28, 2020
Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US8008154B2Aug 30, 2011
Methods of forming impurity containing insulating films and flash memory devices including the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7893482B2Feb 22, 2011
Semiconductor devices having tunnel and gate insulating layers
SAMSUNG ELECTRONICS CO LTD3 citations62
US7608509B2Oct 27, 2009
Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer
SAMSUNG ELECTRONICS CO LTD6 citations62
US7585729B2Sep 8, 2009
Method of manufacturing a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
LG ELECTRONICS INC
7 patentsUS9228769B2Jan 5, 2016
Ice-making device for refrigerator
LG ELECTRONICS INC13 citations92
US8375739B2Feb 19, 2013
Ice-making device for refrigerator
LG ELECTRONICS INC15 citations92
US8366221B2Feb 5, 2013
Door assembly and refrigerator having the same
LG ELECTRONICS INC32 citations92
US8353564B2Jan 15, 2013
Door assembly and refrigerator having the same
LG ELECTRONICS INC21 citations92
US7836720B2Nov 23, 2010
Door for refrigerator having a fixing member for a water pipe
LG ELECTRONICS INC10 citations83
US8667809B2Mar 11, 2014
Ice-making device for refrigerator
LG ELECTRONICS INC3 citations62
US8359878B2Jan 29, 2013
Method of assembling a refrigerator
LG ELECTRONICS INC3 citations62
KIM SEOK-HOON
2 patentsKIM MYUNG-SOO
2 patentsPARK YOO-MIN
2 patentsKIM JIN-GYUN
1 patentKIM SOO JONG
1 patentKIM JIN-BUM
1 patentSAMSUNG ELECTRONICS CO INC
1 patentSAMSUNG ELECTRO MECH
1 patentYOO JEONG-HO
1 patentKIM JIN BUM
1 patentCHOI KYUNG-IN
1 patentTAK YONG SUK
1 patentSPIGEN KOREA CO LTD
1 patentBAEK SUNG-KWEON
1 patentShowing the top 50 of 71 patents by PatentIndex Score.