Inventor

PARK KI-YEON

KR45 patents

⚠️ This page may combine multiple inventors who share the name “PARK KI-YEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK KI-YEON

SAMSUNG ELECTRONICS CO LTD

Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same

Gate structures of a non-volatile memory device and methods of manufacturing the same

Semiconductor device and method for manufacturing the same

Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same

Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics

Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film

Integrated circuit device and method of manufacturing the same

Integrated circuit device and method of fabricating the same

Method of fabricating a nonvolatile memory device

Method for manufacturing semiconductor device employing dielectric layer used to form conductive layer into three dimensional shape

Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodes

Methods of manufacturing semiconductor devices

Method for fabricating semiconductor device

High performance MIS capacitor with HfO2 dielectric

Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure

Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure

Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor

Semiconductor devices and methods of manufacturing the same

Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation

Semiconductor devices and methods of manufacturing the same

Semiconductor devices and methods of manufacturing the same

Methods of forming dielectric structures and capacitors

Non-volatile memory device and method of manufacturing the same

Methods of manufacturing a semiconductor device including a dielectric layer including zirconium

Thin film structure, capacitor, and methods for forming the same

Semiconductor devices and methods of fabricating the same

Semiconductor devices and methods of fabricating the same

Nonvolatile memory device and method of fabricating the same

Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor

Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the same

Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same

Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same

Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same

Semiconductor devices and methods of fabricating the same

Methods forming high dielectric target layer

Method of manufacturing non-volatile memory device

Methods of fabricating semiconductor devices

Method and apparatus for filtering a mobile high-definition link signal

LEE JONG-CHEOL

Semiconductor device including insulating layer of cubic system or tetragonal system

Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer

Semiconductor device including insulating layer of cubic system or tetragonal system

Integrated circuit devices including complex dielectric layers and related fabrication methods

PARK KI YEON

Method for controlling temperature of terminal and terminal supporting the same

Multi-layered electromagnetic wave absorber and manufacturing method thereof

TAK YONG SUK

Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices