Inventor
CHEN JIAN
US828 patents
⚠️ This page may combine multiple inventors who share the name “CHEN JIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
29 patentsUS7259987B2Aug 21, 2007
Systems for variable programming of non-volatile memory
SANDISK CORP103 citations99
US7196928B2Mar 27, 2007
Compensating for coupling during read operations of non-volatile memory
SANDISK CORP832 citations99
US7196946B2Mar 27, 2007
Compensating for coupling in non-volatile storage
SANDISK CORP189 citations99
US7187585B2Mar 6, 2007
Read operation for non-volatile storage that includes compensation for coupling
SANDISK CORP570 citations99
US7177184B2Feb 13, 2007
Selective operation of a multi-state non-volatile memory system in a binary mode
SANDISK CORP147 citations99
US7177199B2Feb 13, 2007
Behavior based programming of non-volatile memory
SANDISK CORP225 citations99
US7099194B2Aug 29, 2006
Error recovery for nonvolatile memory
SANDISK CORP169 citations99
US7020017B2Mar 28, 2006
Variable programming of non-volatile memory
SANDISK CORP860 citations99
US6917542B2Jul 12, 2005
Detecting over programmed memory
SANDISK CORP158 citations99
US6870768B2Mar 22, 2005
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP201 citations99
US6859397B2Feb 22, 2005
Source side self boosting technique for non-volatile memory
SANDISK CORP540 citations99
US6829167B2Dec 7, 2004
Error recovery for nonvolatile memory
SANDISK CORP158 citations99
US6807095B2Oct 19, 2004
Multi-state nonvolatile memory capable of reducing effects of coupling between storage elements
SANDISK CORP323 citations99
US6781877B2Aug 24, 2004
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP520 citations99
US6771536B2Aug 3, 2004
Operating techniques for reducing program and read disturbs of a non-volatile memory
SANDISK CORP494 citations99
US6717847B2Apr 6, 2004
Selective operation of a multi-state non-volatile memory system in a binary mode
SANDISK CORP371 citations99
US6522580B2Feb 18, 2003
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
SANDISK CORP1,400 citations99
US6456528B1Sep 24, 2002
Selective operation of a multi-state non-volatile memory system in a binary mode
SANDISK CORP1,275 citations99
US5930167AJul 27, 1999
Multi-state non-volatile flash memory capable of being its own two state write cache
SANDISK CORP796 citations99
US5867429AFeb 2, 1999
High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
SANDISK CORP1,179 citations99
US7457178B2Nov 25, 2008
Trimming of analog voltages in flash memory devices
SANDISK CORP67 citations98
US7372730B2May 13, 2008
Method of reading NAND memory to compensate for coupling between storage elements
SANDISK CORP65 citations98
US7321509B2Jan 22, 2008
Compensating for coupling in non-volatile storage
SANDISK CORP105 citations98
US7289344B2Oct 30, 2007
Reverse coupling effect with timing information for non-volatile memory
SANDISK CORP97 citations98
US7254071B2Aug 7, 2007
Flash memory devices with trimmed analog voltages
SANDISK CORP61 citations98
US7009889B2Mar 7, 2006
Comprehensive erase verification for non-volatile memory
SANDISK CORP119 citations98
US6996003B2Feb 7, 2006
Operating techniques for reducing program and read disturbs of a non-volatile memory
SANDISK CORP67 citations98
US6975537B2Dec 13, 2005
Source side self boosting technique for non-volatile memory
SANDISK CORP79 citations98
US6914823B2Jul 5, 2005
Detecting over programmed memory after further programming
SANDISK CORP69 citations98
NANOSYS INC
6 patentsUS7067867B2Jun 27, 2006
Large-area nonenabled macroelectronic substrates and uses therefor
NANOSYS INC132 citations99
US7064372B2Jun 20, 2006
Large-area nanoenabled macroelectronic substrates and uses therefor
NANOSYS INC152 citations99
US9169435B2Oct 27, 2015
Highly luminescent nanostructures and methods of producing same
NANOSYS INC70 citations98
US7233041B2Jun 19, 2007
Large-area nanoenabled macroelectronic substrates and uses therefor
NANOSYS INC74 citations98
US7135728B2Nov 14, 2006
Large-area nanoenabled macroelectronic substrates and uses therefor
NANOSYS INC157 citations98
US7091120B2Aug 15, 2006
System and process for producing nanowire composites and electronic substrates therefrom
NANOSYS INC70 citations98
TOSHIBA KK
4 patentsUS7224613B2May 29, 2007
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
TOSHIBA KK95 citations99
US6643188B2Nov 4, 2003
Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
TOSHIBA KK575 citations99
US7061798B2Jun 13, 2006
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
TOSHIBA KK63 citations98
US6944063B2Sep 13, 2005
Non-volatile semiconductor memory with large erase blocks storing cycle counts
TOSHIBA KK91 citations98
UNIV KENTUCKY RES FOUND
2 patentsUS6331262B1Dec 18, 2001
Method of solubilizing shortened single-walled carbon nanotubes in organic solutions
UNIV KENTUCKY RES FOUND201 citations99
US6187823B1Feb 13, 2001
Solubilizing single-walled carbon nanotubes by direct reaction with amines and alkylaryl amines
UNIV KENTUCKY RES FOUND275 citations99
APPLIED MATERIALS INC
1 patentADVANCED MICRO DEVICES INC
1 patentSANDISK TECHNOLOGIES INC
1 patentSPROUSE STEVEN T
1 patentWHITEFORD JEFFERY A
1 patentUNIV PITTSBURGH
1 patentFREESCALE SEMICONDUCTOR INC
1 patent(unassigned)
1 patentZYVEX CORP
1 patentShowing the top 50 of 828 patents by PatentIndex Score.