Inventor
LIM GEUN WON
KR17 patents
Patents
17 patentsUS11152387B2Oct 19, 2021
Semiconductor memory device and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations82
US10573657B2Feb 25, 2020
Non-volatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11133267B2Sep 28, 2021
Semiconductor device including a peripheral circuit region and memory cell regions
SAMSUNG ELECTRONICS CO LTD2 citations71
US10818547B2Oct 27, 2020
Method of manufacturing semiconductor device having a structure pattern having a plurality of trenches
SAMSUNG ELECTRONICS CO LTD2 citations69
US12349360B2Jul 1, 2025
Vertical memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12218062B2Feb 4, 2025
Method of fabricating a semiconductor memory device including an extension gate cutting region
SAMSUNG ELECTRONICS CO LTD0 citations62
US11862566B2Jan 2, 2024
Semiconductor device including a cell array region and an extension region
SAMSUNG ELECTRONICS CO LTD1 citations62
US11264401B2Mar 1, 2022
Vertical memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11004860B2May 11, 2021
Non-volatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10797071B2Oct 6, 2020
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US12108599B2Oct 1, 2024
Semiconductor memory device and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11791287B2Oct 17, 2023
Semiconductor device including a cutting region having a height greater than a height of a channel structure
SAMSUNG ELECTRONICS CO LTD0 citations61
US11706923B2Jul 18, 2023
Semiconductor memory device and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11594550B2Feb 28, 2023
Nonvolatile memory device with h-shaped blocks and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11476275B2Oct 18, 2022
Nonvolatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11495495B2Nov 8, 2022
Method of manufacturing semiconductor device having a structure pattern having a plurality of trenches
SAMSUNG ELECTRONICS CO LTD0 citations58
US12199043B2Jan 14, 2025
Semiconductor memory devices, methods for fabricating the same and electronic systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations46