Inventor

LU WEI-YUAN

TW61 patents

⚠️ This page may combine multiple inventors who share the name “LU WEI-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LU WEI-YUAN

TAIWAN SEMICONDUCTOR MFG CO LTD

Method for forming semiconductor device

Semiconductor device with self-aligned wavy contact profile and method of forming the same

Semiconductor device with self-aligned wavy contact profile and method of forming the same

Semiconductor device and method for manufacturing the same

Semiconductor device with epitaxial source/drain

Source and drain formation technique for fin-like field effect transistor

Semiconductor device and manufacturing method thereof

Formation of dislocations in source and drain regions of FinFET devices

Formation of dislocations in source and drain regions of FinFET devices

Transistor source/drain regions and methods of forming the same

Semiconductor device having an upper epitaxial layer contacting two lower epitaxial layers

Epitaxial source/drain structure and method

Lightly-doped channel extensions

Merged source/drain features

Merged source/drain features

Semiconductor device and manufacturing method thereof

Source and drain surface treatment for multi-gate field effect transistors

FinFET doping methods and structures thereof

Semiconductor device

Semiconductor device and manufacturing method thereof

FinFET doping methods and structures thereof

Formation of dislocations in source and drain regions of FinFET devices

Semiconductor device with self-aligned wavy contact profile and method of forming the same

Epitaxial source/drain structure and method

Lightly-doped channel extensions

Merged source/drain features

Semiconductor device with self-aligned wavy contact profile and method of forming the same

Strained structure of a semiconductor device

Epitaxial source/drain structure and method

MOSFETs with multiple dislocation planes

Semiconductor device with epitaxial source/drain

Semiconductor device with phosphorus-doped epitaxial features

Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases

Semiconductor device having strained channels

TAIWAN SEMICONDUCTOR MFG

Formation of dislocations in source and drain regions of FinFET devices

Methods of forming integrated circuits

Method for semiconductor device fabrication

Techniques providing high-k dielectric metal gate CMOS

Strained semiconductor device with recessed channel

Gate structure having lightly doped region

Semiconductor device

LU WEI-YUAN

Techniques providing high-k dielectric metal gate CMOS

Semiconductor device and method of forming the same

Semiconductor device with multiple stress structures and method of forming the same

MOSFETs with multiple dislocation planes

FUNG KA-HING

Self-aligned two-step STI formation through dummy poly removal

Methods of forming integrated circuits

CHENG CHUN-FAI

Strained structure of a p-type field effect transistor

UNIV NAT TSING HUA

Catalyst and method for manufacturing the same and method for hydrogenating aromatic epoxy compound

HING FUNG KA

Method for fabricating a gate structure