Inventor

GROTE BERNHARD

US32 patents

⚠️ This page may combine multiple inventors who share the name “GROTE BERNHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GROTE BERNHARD

NXP USA INC

Termination design for trench superjunction power MOSFET

Field-effect transistor and method therefor

Field-effect transistor and method therefor

Termination design for trench superjunction power MOSFET

Field-effect transistor and method therefor

Semiconductor device with a base link region and method therefor

Laterally-diffused metal-oxide semiconductor transistor and method therefor

Termination for trench field plate power MOSFET

Termination for trench field plate power MOSFET

Laterally-diffused metal-oxide semiconductor transistor and method therefor

Trench with different transverse cross-sectional widths

Transistor devices with extended drain regions located in trench sidewalls

Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor

Transistors with self-aligned source-connected field plates

Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor

Transistor devices with termination regions

Transistor formed with spacer

Transistor with extended drain region

Transistor trench with field plate structure

Semiconductor device with a field plate having a recessed region and an overhanging portion and method of fabrication therefor

Transistors with source-connected field plates

Transistor with gate/field plate structure

Vertical transistor with extended drain region

Die with buried doped isolation region

Transistor trench structure with field plate structures

Structure for improved noise signal isolation

NXP BV

Transistors with source-connected field plates

Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layers

Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor

Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor

Semiconductor device with extrinsic base region and method of fabrication therefor

FREESCALE SEMICONDUCTOR INC

Radio frequency coupling and transition structure