P

Inventor

PRIBAT DIDIER

FR32 patents
⚠️ This page may combine multiple inventors who share the name “PRIBAT DIDIER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

THOMSON CSF

22 patents
US5314569AMay 24, 1994

Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes

THOMSON CSF73 citations95
US5294564AMar 15, 1994

Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products

THOMSON CSF56 citations95
US4999314AMar 12, 1991

Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material

THOMSON CSF67 citations95
US5090932AFeb 25, 1992

Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters

THOMSON CSF91 citations94
US4952526AAug 28, 1990

Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material

THOMSON CSF103 citations94
US6356028B1Mar 12, 2002

Screen control with cathodes having low electronic affinity

THOMSON CSF55 citations92
US5127990AJul 7, 1992

Method of fabricating an electronic micro-component self-sealed under vacuum, notably diode or triode

THOMSON CSF28 citations92
US4413170ANov 1, 1983

Thermal printing head

THOMSON CSF33 citations92
US5360754ANov 1, 1994

Method for the making heteroepitaxial thin layers and electronic devices

THOMSON CSF30 citations91
US5356510AOct 18, 1994

Method for the growing of heteroepitaxial layers

THOMSON CSF23 citations91
US5017340AMay 21, 1991

Temperature compensated resistive type sensor for the measurement of relative concentrations of fluid reactive species

THOMSON CSF37 citations90
US4540452ASep 10, 1985

Process for manufacturing a semi-conductor device of the type comprising at least one silicon layer deposited on an insulating substrate

THOMSON CSF23 citations81
US5625250AApr 29, 1997

Electronic micro-component self-sealed under vacuum, notably diode or triode, and corresponding fabrication method

THOMSON CSF5 citations74
US6476408B1Nov 5, 2002

Field emission device

THOMSON CSF10 citations73
US5429737AJul 4, 1995

Electrochemical sensor with integrated structure for the measurement of relative concentrations of reactive species

THOMSON CSF10 citations72
US5273929ADec 28, 1993

Method of manufacture transistor having gradient doping during lateral epitaxy

THOMSON CSF16 citations72
US5087275AFeb 11, 1992

Electrochemical sensor having microcavities

THOMSON CSF12 citations71
US5053833AOct 1, 1991

Device made of oxide superconductive material covered with ion conductive means for adjusting the doping level and tc thereof

THOMSON CSF7 citations71
US4956073ASep 11, 1990

Method to make microcavities and its application to an electrochemical sensor

THOMSON CSF8 citations71
US5397735AMar 14, 1995

Process for hardening active electronic components against ionizing radiations, and hardened components of large dimensions

THOMSON CSF18 citations69
US5262348ANov 16, 1993

Method for the growing of heteroepitaxial layers within a confinement space

THOMSON CSF14 citations69
US4986787AJan 22, 1991

Method of making an integrated component of the cold cathode type

THOMSON CSF5 citations54

THALES SA

2 patents

CENTRE NAT RECH SCIENT

2 patents

HYUNDAI MOTOR CO LTD

2 patents

BONDAVALLI PAOLO

1 patent

BARATON LAURENT

1 patent

PRIBAT DIDIER

1 patent

THOMSON RECH

1 patent