Inventor
VELASCO GONZALO
FR14 patents
⚠️ This page may combine multiple inventors who share the name “VELASCO GONZALO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
THOMSON CSF
13 patentsUS4151058AApr 24, 1979
Method for manufacturing a layer of amorphous silicon usable in an electronic device
THOMSON CSF54 citations95
US4364226ADec 21, 1982
Device for inserting a sensor into the exhaust conduits of an internal combustion engine and a fuel-control system using such a device
THOMSON CSF36 citations92
US4334510AJun 15, 1982
Electrochemical sensor for measuring relative concentrations of reactive species in a fluid mixture and a system comprising said sensor, especially for regulation
THOMSON CSF9 citations73
US4272350AJun 9, 1981
Electrochemical sensor for measuring concentrations of species in a fluid mixture, of the type comprising a partial-pressure internal reference electrode
THOMSON CSF19 citations73
US4203649AMay 20, 1980
Process for manufacturing an integrated optical structure and an _opto-electronic device using said structure
THOMSON CSF16 citations73
US4178418ADec 11, 1979
Galvanic cell for the electrochemical production or storage of electrical energy
THOMSON CSF16 citations73
US5429737AJul 4, 1995
Electrochemical sensor with integrated structure for the measurement of relative concentrations of reactive species
THOMSON CSF10 citations72
US5087275AFeb 11, 1992
Electrochemical sensor having microcavities
THOMSON CSF12 citations71
US4956073ASep 11, 1990
Method to make microcavities and its application to an electrochemical sensor
THOMSON CSF8 citations71
US4271000AJun 2, 1981
Electrochemical sensor for measuring relative concentrations of reactive species in a fluid mixture
THOMSON CSF4 citations62
US4085048AApr 18, 1978
Device for separating fluids and a method of manufacturing it
THOMSON CSF5 citations62
US5106480AApr 21, 1992
Device of the solid-electrolyte electrochemical cell type
THOMSON CSF3 citations56
US4268535AMay 19, 1981
Process for growing a superficial dielectric structure upon a substrate, made of a chemical compound, comprising at least two elements
THOMSON CSF0 citations51