Inventor
HAGINO HIROYASU
JP16 patents
Patents
16 patentsUS5380670AJan 10, 1995
Method of fabricating a semiconductor device
MITSUBISHI ELECTRIC CORP21 citations92
US5304821AApr 19, 1994
MOS-gate-turnoff thyristor
MITSUBISHI ELECTRIC CORP44 citations92
US5171696ADec 15, 1992
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP40 citations92
US5086324AFeb 4, 1992
Insulated gate bipolar transistor
MITSUBISHI ELECTRIC CORP29 citations92
US5084401AJan 28, 1992
Insulated gate bipolar transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP22 citations92
US5023691AJun 11, 1991
Insulated gate bipolar transistor
MITSUBISHI ELECTRIC CORP23 citations92
US4990975AFeb 5, 1991
Insulated gate bipolar transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP22 citations92
US5170239ADec 8, 1992
Insulated gate bipolar transistor having high short-circuit SOA and high latch-up current
MITSUBISHI ELECTRIC CORP15 citations81
US5451531ASep 19, 1995
Method of fabricating an insulated gate semiconductor device
MITSUBISHI ELECTRIC CORP14 citations74
US5321281AJun 14, 1994
Insulated gate semiconductor device and method of fabricating same
MITSUBISHI ELECTRIC CORP15 citations74
US5391898AFeb 21, 1995
Insulated gate bipolar transistor having high short-circuit and latch-up withstandability
MITSUBISHI ELECTRIC CORP12 citations73
US4662957AMay 5, 1987
Method of producing a gate turn-off thyristor
MITSUBISHI ELECTRIC CORP11 citations73
US4001873AJan 4, 1977
Semiconductor device
MITSUBISHI ELECTRIC CORP11 citations73
US3933541AJan 20, 1976
Process of producing semiconductor planar device
MITSUBISHI ELECTRIC CORP14 citations73
US4556898ADec 3, 1985
Semiconductor device
MITSUBISHI ELECTRIC CORP3 citations62
US5489788AFeb 6, 1996
Insulated gate semiconductor device with improved short-circuit tolerance
MITSUBISHI ELECTRIC CORP0 citations42