Inventor

TELECCO NICOLA

IT16 patents

⚠️ This page may combine multiple inventors who share the name “TELECCO NICOLA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ATMEL CORP

10 patents

US7633800B2Dec 15, 2009

Simultaneous external read operation during internal programming in a flash memory device

ATMEL CORP21 citations86

US7180779B2Feb 20, 2007

Memory architecture with enhanced over-erase tolerant control gate scheme

ATMEL CORP9 citations73

US7180276B2Feb 20, 2007

Dual stage voltage regulation circuit

ATMEL CORP5 citations73

US6700415B2Mar 2, 2004

Sense amplifier with configurable voltage swing control

ATMEL CORP9 citations73

US6518798B2Feb 11, 2003

Sense amplifier with improved latching

ATMEL CORP7 citations73

US7580291B2Aug 25, 2009

Data register with efficient erase, program verify, and direct bit-line memory access features

ATMEL CORP0 citations51

US7031211B1Apr 18, 2006

Direct memory access interface in integrated circuits

ATMEL CORP1 citations49

SGS THOMSON MICROELECTRONICS

5 patents

US5729490AMar 17, 1998

Parallel-dichotomic serial sensing method for sensing multiple-level non-volatile memory cells, and sensing circuit for actuating such method

SGS THOMSON MICROELECTRONICS135 citations97

US5838612ANov 17, 1998

Reading circuit for multilevel non volatile memory cell devices

SGS THOMSON MICROELECTRONICS35 citations92

US5673221ASep 30, 1997

Circuit and method for reading a memory cell that can store multiple bits of data

SGS THOMSON MICROELECTRONICS40 citations92

US5694363ADec 2, 1997

Reading circuit for memory cell devices having a low supply voltage

SGS THOMSON MICROELECTRONICS19 citations84

US5986921ANov 16, 1999

Clock circuit for reading a multilevel non volatile memory cells device

SGS THOMSON MICROELECTRONICS0 citations41

ST MICROELECTRONICS SRL

1 patent

USRE38166EJul 1, 2003

Circuit and method for reading a memory cell that can store multiple bits of data

ST MICROELECTRONICS SRL3 citations62

TELECCO NICOLA

ATMEL CORP

Redundancy scheme in memory

Dual stage voltage regulation circuit

Nonvolatile semiconductor memory apparatus

Simultaneous external read operation during internal programming in a flash memory device

Memory architecture with enhanced over-erase tolerant control gate scheme

Dual stage voltage regulation circuit

Sense amplifier with configurable voltage swing control

Sense amplifier with improved latching

Data register with efficient erase, program verify, and direct bit-line memory access features

Direct memory access interface in integrated circuits

SGS THOMSON MICROELECTRONICS

Parallel-dichotomic serial sensing method for sensing multiple-level non-volatile memory cells, and sensing circuit for actuating such method

Reading circuit for multilevel non volatile memory cell devices

Circuit and method for reading a memory cell that can store multiple bits of data

Reading circuit for memory cell devices having a low supply voltage

Clock circuit for reading a multilevel non volatile memory cells device

ST MICROELECTRONICS SRL

Circuit and method for reading a memory cell that can store multiple bits of data