Inventor

GODA AKIRA

US308 patents

⚠️ This page may combine multiple inventors who share the name “GODA AKIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GODA AKIRA

TOSHIBA KK

Nonvolatile semiconductor memory device

Semiconductor memory

Semiconductor memory

Nonvolatile semiconductor memory device

Data writing method for semiconductor memory device and semiconductor memory device

Semiconductor memory

Nonvolatile semiconductor memory

Semiconductor memory device

Data storage system

Data writing method for semiconductor memory device and semiconductor memory device

Semiconductor device

Semiconductor memory device

Nonvolatile semiconductor memory and a fabrication method thereof

Semiconductor memory

Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the data

Data memory system

Semiconductor device and method of manufacturing the same

Semiconductor memory device

Semiconductor device and method of fabricating the same

Semiconductor device with source line and fabrication method thereof

Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems

Semiconductor memory device

Semiconductor device with trench isolation between two regions having different gate insulating films

Semiconductor memory

Data writing method for semiconductor memory device and semiconductor memory device

Semiconductor device and method of manufacturing the same

Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio

Semiconductor device

MICRON TECHNOLOGY INC

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Programming method for NAND EEPROM

Memory device including multiple select gates and different bias conditions

NAND with back biased operation

Memory cell operation

Methods of forming microelectronic devices, and related microelectronic devices and electronic systems

Methods of forming NAND memory arrays

Integrated structures comprising channel material extending into source material

Apparatuses including memory cells with gaps comprising low dielectric constant materials

Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Apparatuses and methods for forming multiple decks of memory cells

Methods of forming memory cells with air gaps and other low dielectric constant materials

Apparatuses and methods to control body potential in memory operations

Apparatuses and methods for forming multiple decks of memory cells

Methods of forming memory cells with air gaps and other low dielectric constant materials

Floating gate memory cells in vertical memory

Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof

Apparatus and methods including source gates

Apparatuses and methods to control body potential in memory operations

INTEL CORP

Erase and soft program for vertical NAND flash

Arrangements for operating a memory circuit

GODA AKIRA

Memory devices having source lines directly coupled to body regions and methods