Inventor

U REN GREG D

US18 patents

⚠️ This page may combine multiple inventors who share the name “U REN GREG D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

U REN GREG D

NEWPORT FAB LLC

Method for integrating a metastable base into a high-performance HBT and related structure

Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS process

Method for fabricating a selective eptaxial HBT emitter

Metastable base in a high-performance HBT

Bipolar transistor formed using selective and non-selective epitaxy for base integration in a BiCMOS process

Method for effective BiCMOS process integration

Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor

Method for eliminating collector-base band gap in an HBT

Structure for a selective epitaxial HBT emitter

Selective and non-selective epitaxy for base intergration in a BiCMOS process

Selective and non-selective epitaxy for base integration in a BiCMOS process and related structure

NPN transistor having reduced extrinsic base resistance and improved manufacturability

Reducing extrinsic base resistance in an NPN transistor

Structure for eliminating collector-base band gap discontinuity in an HBT

Integration of phosphorus emitter in an NPN device in a BiCMOS process

NPN transistor having reduced extrinsic base resistance and improved manufacturability

Band gap compensated HBT

U REN GREG D

Integration of an NPN device with phosphorus emitter and controlled emitter-base junction depth in a BiCMOS process