Inventor

JIN BEOM-JUN

KR22 patents

⚠️ This page may combine multiple inventors who share the name “JIN BEOM-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JIN BEOM-JUN

SAMSUNG ELECTRONICS CO LTD

Methods of manufacturing integrated circuit devices having contact holes using multiple insulating layers

Non-volatile memory devices including vertical NAND strings and methods of forming the same

Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby

Methods of forming contact holes using multiple insulating layers

Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad

Semiconductor device having transistor

Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes

Semiconductor device test patterns and related methods for precisely measuring leakage currents in semiconductor cell transistors

Semiconductor memory device having multi-layered storage node contact plug and method for fabricating the same

Semiconductor memory device having multilayered storage node contact plug and method for fabricating the same

Non-volatile semiconductor memory device and method of manufacturing the same

Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed

Semiconductor device having transistor and method of manufacturing the same

Circuit board having bypass pad

Circuit board having bypass pad

Circuit board having bypass pad

Circuit board having bypass pad

JIN BEOM-JUN

Methods of forming non-volatile memory devices including vertical NAND strings

Non-volatile memory devices including vertical NAND strings and methods of forming the same

Methods of forming non-volatile memory devices including vertical NAND strings

HAN SANG-GUK

Circuit board having bypass pad

Circuit board having bypass pad