Inventor
LI LIH-PING
TW17 patents
⚠️ This page may combine multiple inventors who share the name “LI LIH-PING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
16 patentsUS6812043B2Nov 2, 2004
Method for forming a carbon doped oxide low-k insulating layer
TAIWAN SEMICONDUCTOR MFG82 citations98
US6962869B1Nov 8, 2005
SiOCH low k surface protection layer formation by CxHy gas plasma treatment
TAIWAN SEMICONDUCTOR MFG77 citations97
US6958524B2Oct 25, 2005
Insulating layer having graded densification
TAIWAN SEMICONDUCTOR MFG22 citations92
US7288284B2Oct 30, 2007
Post-cleaning chamber seasoning method
TAIWAN SEMICONDUCTOR MFG32 citations91
US6756321B2Jun 29, 2004
Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant
TAIWAN SEMICONDUCTOR MFG49 citations91
US7001833B2Feb 21, 2006
Method for forming openings in low-k dielectric layers
TAIWAN SEMICONDUCTOR MFG20 citations88
US6770570B2Aug 3, 2004
Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer
TAIWAN SEMICONDUCTOR MFG13 citations84
US6867126B1Mar 15, 2005
Method to increase cracking threshold for low-k materials
TAIWAN SEMICONDUCTOR MFG9 citations73
US6623654B2Sep 23, 2003
Thin interface layer to improve copper etch stop
TAIWAN SEMICONDUCTOR MFG5 citations72
US7897505B2Mar 1, 2011
Method for enhancing adhesion between layers in BEOL fabrication
TAIWAN SEMICONDUCTOR MFG2 citations63
US7456093B2Nov 25, 2008
Method for improving a semiconductor device delamination resistance
TAIWAN SEMICONDUCTOR MFG3 citations63
US6602780B2Aug 5, 2003
Method for protecting sidewalls of etched openings to prevent via poisoning
TAIWAN SEMICONDUCTOR MFG4 citations63
US6753269B1Jun 22, 2004
Method for low k dielectric deposition
TAIWAN SEMICONDUCTOR MFG2 citations62
US6924242B2Aug 2, 2005
SiOC properties and its uniformity in bulk for damascene applications
TAIWAN SEMICONDUCTOR MFG5 citations59
US7320945B2Jan 22, 2008
Gradient low k material
TAIWAN SEMICONDUCTOR MFG1 citations52
US6884659B2Apr 26, 2005
Thin interface layer to improve copper etch stop
TAIWAN SEMICONDUCTOR MFG1 citations50