Inventor
ROCCAFORTE FABRIZIO
IT9 patents
Patents
9 patentsUS10566450B2Feb 18, 2020
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
ST MICROELECTRONICS SRL4 citations70
US11316025B2Apr 26, 2022
Silicon carbide-based electronic device and method of manufacturing the same
ST MICROELECTRONICS SRL4 citations68
US11699748B2Jul 11, 2023
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations60
US11038047B2Jun 15, 2021
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations60
US12520517B2Jan 6, 2026
HEMT device having low conduction losses and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations59
US12051731B2Jul 30, 2024
Silicon carbide-based electronic device and method of manufacturing the same
ST MICROELECTRONICS SRL0 citations57
US12593485B2Mar 31, 2026
Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device
ST MICROELECTRONICS SRL0 citations55
US12426285B2Sep 23, 2025
Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device
ST MICROELECTRONICS SRL0 citations47
US9711599B2Jul 18, 2017
Wide bandgap high-density semiconductor switching device and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations40