Inventor

RAYMOND MARK V

US22 patents

⚠️ This page may combine multiple inventors who share the name “RAYMOND MARK V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RAYMOND MARK V

GLOBALFOUNDRIES INC

Middle of the line (MOL) metal contacts

Methods of forming a gate contact for a transistor above an active region and the resulting device

Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structures

Integrated circuit structure with stepped epitaxial region

Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices

Methods of forming a semiconductor device with a gate contact positioned above the active region

Interconnects formed by a metal displacement reaction

Gate contact structure for a transistor

Methods of forming a gate contact structure for a transistor

Methods of forming a gate contact structure above an active region of a transistor

Interconnects formed by a metal replacement process

Method, apparatus, and system for MOL interconnects without titanium liner

Method, apparatus, and system for MOL interconnects without titanium liner

Middle of the line (MOL) metal contacts

MOTOROLA INC

Semiconductor structure and process for forming a metal oxy-nitride dielectric layer

Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber

FREESCALE SEMICONDUCTOR INC

Method of making metal gate transistors

Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same

IBM

Forming self-aligned contact with spacer first

Surface area and Schottky barrier height engineering for contact trench epitaxy

GLOBALFOUNDRIES US INC

Gate contact structure for a transistor device

CHOI KISIK

Methods of forming a replacement gate structure having a gate electrode comprised of a deposited intermetallic compound material