Inventor
PIO FEDERICO
IT85 patents
⚠️ This page may combine multiple inventors who share the name “PIO FEDERICO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
24 patentsUS5792670AAug 11, 1998
Method of manufacturing double polysilicon EEPROM cell and access transistor
ST MICROELECTRONICS SRL76 citations96
US6865114B2Mar 8, 2005
Word line selector for a semiconductor memory
ST MICROELECTRONICS SRL22 citations93
US6668303B2Dec 23, 2003
Method for refreshing stored data in an electrically erasable and programmable non-volatile memory
ST MICROELECTRONICS SRL24 citations93
US6643184B2Nov 4, 2003
Method of erasing a flash memory
ST MICROELECTRONICS SRL49 citations93
US6548355B2Apr 15, 2003
EEPROM memory cell and corresponding manufacturing method
ST MICROELECTRONICS SRL18 citations93
US6309972B1Oct 30, 2001
Method of enhancing protection of dielectrics from plasma induced damages and equipment
ST MICROELECTRONICS SRL26 citations93
US6259132B1Jul 10, 2001
Array of electrically programmable non-volatile semiconductor memory cells comprising ROM memory cells
ST MICROELECTRONICS SRL31 citations93
US6115313ASep 5, 2000
Method for saving data in the event of unwanted interruptions in the programming cycle of a nonvolatile memory, and a nonvolatile memory
ST MICROELECTRONICS SRL28 citations93
US5793673AAug 11, 1998
Double polysilicon EEPROM cell and corresponding manufacturing process and programming method
ST MICROELECTRONICS SRL29 citations93
US7345905B2Mar 18, 2008
Memory device with time-shifting based emulation of reference cells
ST MICROELECTRONICS SRL41 citations92
US6278159B1Aug 21, 2001
Process for the manufacture of integrated devices with gate oxide protection from manufacturing process damage, and protection structure therefor
ST MICROELECTRONICS SRL24 citations92
US6128219AOct 3, 2000
Nonvolatile memory test structure and nonvolatile memory reliability test method
ST MICROELECTRONICS SRL47 citations90
US6815328B2Nov 9, 2004
Method of manufacturing an integrated semiconductor device having a plurality of connection levels
ST MICROELECTRONICS SRL16 citations84
US6268633B1Jul 31, 2001
Electronic structure comprising high and low voltage transistors, and a corresponding fabrication method
ST MICROELECTRONICS SRL18 citations82
US6852596B2Feb 8, 2005
Electronic memory circuit and related manufacturing method
ST MICROELECTRONICS SRL6 citations74
US6437393B1Aug 20, 2002
Non-volatile memory cell with silicided contacts
ST MICROELECTRONICS SRL5 citations74
US6215688B1Apr 10, 2001
Electronic memory circuit and related manufacturing method
ST MICROELECTRONICS SRL10 citations74
US6127224AOct 3, 2000
Process for forming a non-volatile memory cell with silicided contacts
ST MICROELECTRONICS SRL15 citations74
US5659501AAug 19, 1997
Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device
ST MICROELECTRONICS SRL7 citations74
US5528536AJun 18, 1996
Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device
ST MICROELECTRONICS SRL6 citations74
US6255163B1Jul 3, 2001
Process for manufacturing selection transistors for nonvolatile serial-flash, EPROM, EEPROM and flash-EEPROM memories in standard or AMG configuration
ST MICROELECTRONICS SRL8 citations73
US6151245ANov 21, 2000
Screened EEPROM cell
ST MICROELECTRONICS SRL10 citations73
US6803630B2Oct 12, 2004
Method of adjusting program voltage in non-volatile memories, and process for fabricating a non-volatile memory device
ST MICROELECTRONICS SRL11 citations72
US6473341B1Oct 29, 2002
Method for programming EEPROM memory devices with improved reliability, and respective EEPROM memory device
ST MICROELECTRONICS SRL6 citations72
MICRON TECHNOLOGY INC
9 patentsUS10431301B2Oct 1, 2019
Auto-referenced memory cell read techniques
MICRON TECHNOLOGY INC39 citations98
US9252362B2Feb 2, 2016
Method for making three dimensional memory array architecture using phase change and ovonic switching materials
MICRON TECHNOLOGY INC28 citations94
US11031258B2Jun 8, 2021
Semiconductor packages with patterns of die-specific information
MICRON TECHNOLOGY INC4 citations84
US10600480B2Mar 24, 2020
Auto-referenced memory cell read techniques
MICRON TECHNOLOGY INC8 citations84
US9595667B2Mar 14, 2017
Three dimensional memory array architecture
MICRON TECHNOLOGY INC6 citations84
US9444046B2Sep 13, 2016
Three dimensional memory array architecture
MICRON TECHNOLOGY INC13 citations84
US12131916B2Oct 29, 2024
Semiconductor packages with patterns of die-specific information
MICRON TECHNOLOGY INC2 citations73
US12249370B2Mar 11, 2025
Systems and techniques for accessing multiple memory cells concurrently
MICRON TECHNOLOGY INC0 citations63
US11705194B2Jul 18, 2023
Systems and techniques for accessing multiple memory cells concurrently
MICRON TECHNOLOGY INC0 citations63
PIO FEDERICO
7 patentsUS8841649B2Sep 23, 2014
Three dimensional memory array architecture
PIO FEDERICO65 citations98
US8729523B2May 20, 2014
Three dimensional memory array architecture
PIO FEDERICO68 citations98
US8248851B1Aug 21, 2012
System, apparatus, and reading method for NAND memories
PIO FEDERICO20 citations92
US8737138B2May 27, 2014
Memory instruction including parameter to affect operating condition of memory
PIO FEDERICO5 citations84
US8093090B1Jan 10, 2012
Integrated circuit edge and method to fabricate the same
PIO FEDERICO7 citations84
US7630263B2Dec 8, 2009
Exploiting a statistical distribution of the values of an electrical characteristic in a population of auxiliary memory cells for obtaining reference cells
PIO FEDERICO17 citations84
US10114746B2Oct 30, 2018
Nonvolatile storage using low latency and high latency memory
PIO FEDERICO3 citations73
SGS THOMSON MICROELECTRONICS
7 patentsUS5936298AAug 10, 1999
Method for realizing magnetic circuits in an integrated circuit
SGS THOMSON MICROELECTRONICS67 citations96
US5894146AApr 13, 1999
EEPROM memory cells matrix with double polysilicon level and relating manufacturing process
SGS THOMSON MICROELECTRONICS22 citations90
US5677871AOct 14, 1997
Circuit structure for a memory matrix and corresponding manufacturing method
SGS THOMSON MICROELECTRONICS16 citations81
US5553017ASep 3, 1996
Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same
SGS THOMSON MICROELECTRONICS6 citations74
US5527728AJun 18, 1996
Method of making thin oxide portions consisting of gate and tunnel oxides particularly in electrically erasable and programmable read-only memory cells
SGS THOMSON MICROELECTRONICS9 citations74
US5393684AFeb 28, 1995
Method of making thin oxide portions particularly in electrically erasable and programmable read-only memory cells
SGS THOMSON MICROELECTRONICS7 citations74
US5597750AJan 28, 1997
Method of manufacturing a matrix of memory cells having control gates
SGS THOMSON MICROELECTRONICS7 citations73
INTEL CORP
2 patentsMICHELONI RINO
1 patentShowing the top 50 of 85 patents by PatentIndex Score.