Inventor
SHI WENGUANG
CN20 patents
⚠️ This page may combine multiple inventors who share the name “SHI WENGUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
15 patentsUS10553604B2Feb 4, 2020
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD31 citations97
US10593690B2Mar 17, 2020
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD21 citations94
US11785776B2Oct 10, 2023
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations85
US10930663B2Feb 23, 2021
Interconnect structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations85
US10923491B2Feb 16, 2021
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD4 citations84
US10910397B2Feb 2, 2021
Through array contact structure of three- dimensional memory device
YANGTZE MEMORY TECH CO LTD5 citations83
US11758732B2Sep 12, 2023
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations73
US11527547B2Dec 13, 2022
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations73
US11956953B2Apr 9, 2024
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations72
US11545505B2Jan 3, 2023
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10886291B2Jan 5, 2021
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD2 citations72
US12185550B2Dec 31, 2024
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12137567B2Nov 5, 2024
Interconnect structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations62
US12137568B2Nov 5, 2024
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11482532B2Oct 25, 2022
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
SANDISK TECHNOLOGIES INC
5 patentsUS9502471B1Nov 22, 2016
Multi tier three-dimensional memory devices including vertically shared bit lines
SANDISK TECHNOLOGIES INC116 citations98
US9543318B1Jan 10, 2017
Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
SANDISK TECHNOLOGIES INC80 citations97
US9853043B2Dec 26, 2017
Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material
SANDISK TECHNOLOGIES INC49 citations94
US9679906B2Jun 13, 2017
Three-dimensional memory devices containing memory block bridges
SANDISK TECHNOLOGIES INC35 citations94
US9716101B2Jul 25, 2017
Forming 3D memory cells after word line replacement
SANDISK TECHNOLOGIES INC8 citations84