P

Inventor

SHI WENGUANG

CN20 patents
⚠️ This page may combine multiple inventors who share the name “SHI WENGUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

15 patents
US10553604B2Feb 4, 2020

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD31 citations97
US10593690B2Mar 17, 2020

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD21 citations94
US11785776B2Oct 10, 2023

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD6 citations85
US10930663B2Feb 23, 2021

Interconnect structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD14 citations85
US10923491B2Feb 16, 2021

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD4 citations84
US10910397B2Feb 2, 2021

Through array contact structure of three- dimensional memory device

YANGTZE MEMORY TECH CO LTD5 citations83
US11758732B2Sep 12, 2023

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations73
US11527547B2Dec 13, 2022

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations73
US11956953B2Apr 9, 2024

Joint opening structures of three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations72
US11545505B2Jan 3, 2023

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD1 citations72
US10886291B2Jan 5, 2021

Joint opening structures of three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD2 citations72
US12185550B2Dec 31, 2024

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US12137567B2Nov 5, 2024

Interconnect structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD1 citations62
US12137568B2Nov 5, 2024

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US11482532B2Oct 25, 2022

Joint opening structures of three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62

SANDISK TECHNOLOGIES INC

5 patents