Inventor
Liao shan-mei
TW17 patents
Patents
17 patentsUS12550374B2Feb 10, 2026
Semiconductor device and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317574B2May 27, 2025
Device providing multiple threshold voltages and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12171091B2Dec 17, 2024
Multi-layer high-k gate dielectric structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12041760B2Jul 16, 2024
Multi-layer high-k gate dielectric structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009400B2Jun 11, 2024
Device providing multiple threshold voltages and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12433011B2Sep 30, 2025
Post gate dielectric processing for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302627B2May 13, 2025
Semiconductor device with non-conformal gate dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11908745B2Feb 20, 2024
Semiconductor device with non-conformal gate dieletric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735484B2Aug 22, 2023
Post gate dielectric processing for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605563B2Mar 14, 2023
Semiconductor device with non-conformal gate dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12074206B2Aug 27, 2024
Integrated circuit device with improved reliability
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12154964B2Nov 26, 2024
Metal gates with layers for transistor threshold voltage tuning and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12593496B2Mar 31, 2026
Multiple threshold voltage implementation through lanthanum incorporation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12022643B2Jun 25, 2024
Multi-layer high-k gate dielectric structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11664279B2May 30, 2023
Multiple threshold voltage implementation through lanthanum incorporation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12453165B2Oct 21, 2025
P-type semiconductor devices with different threshold voltages and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12142640B2Nov 12, 2024
Semiconductor structures with multiple threshold voltage offerings and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50