Inventor
WANG JER-FU
TW19 patents
⚠️ This page may combine multiple inventors who share the name “WANG JER-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS11929115B2Mar 12, 2024
Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12426519B2Sep 23, 2025
Memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12424492B2Sep 23, 2025
Self-aligned contact for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402327B2Aug 26, 2025
Memory devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243619B2Mar 4, 2025
Memory array structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035532B2Jul 9, 2024
Memory array and memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12022752B2Jun 25, 2024
Methods of forming memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11903334B2Feb 13, 2024
Memory devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854594B2Dec 26, 2023
Data processing method, data processing circuit, and computing apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605779B2Mar 14, 2023
Memory cell, method of forming the same, and semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12593492B2Mar 31, 2026
Electronic device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12396176B2Aug 19, 2025
3T memory with enhanced speed of operation and data retention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12356600B2Jul 8, 2025
SRAM memory cell device comprising ferroelectric access and storage transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12069970B2Aug 20, 2024
Memory device, method for configuring memory cell in N-bit memory unit, and memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12593496B2Mar 31, 2026
Multiple threshold voltage implementation through lanthanum incorporation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11664279B2May 30, 2023
Multiple threshold voltage implementation through lanthanum incorporation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12527081B2Jan 13, 2026
Semiconductor device and logic device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12475942B2Nov 18, 2025
Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49