P

Inventor

WANG JER-FU

TW19 patents
⚠️ This page may combine multiple inventors who share the name “WANG JER-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

18 patents
US11929115B2Mar 12, 2024

Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12426519B2Sep 23, 2025

Memory devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12424492B2Sep 23, 2025

Self-aligned contact for embedded memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402327B2Aug 26, 2025

Memory devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243619B2Mar 4, 2025

Memory array structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035532B2Jul 9, 2024

Memory array and memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12022752B2Jun 25, 2024

Methods of forming memory devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11903334B2Feb 13, 2024

Memory devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854594B2Dec 26, 2023

Data processing method, data processing circuit, and computing apparatus

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605779B2Mar 14, 2023

Memory cell, method of forming the same, and semiconductor die

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12593492B2Mar 31, 2026

Electronic device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12396176B2Aug 19, 2025

3T memory with enhanced speed of operation and data retention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12356600B2Jul 8, 2025

SRAM memory cell device comprising ferroelectric access and storage transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12069970B2Aug 20, 2024

Memory device, method for configuring memory cell in N-bit memory unit, and memory array

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12593496B2Mar 31, 2026

Multiple threshold voltage implementation through lanthanum incorporation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11664279B2May 30, 2023

Multiple threshold voltage implementation through lanthanum incorporation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12527081B2Jan 13, 2026

Semiconductor device and logic device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12475942B2Nov 18, 2025

Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

LIN CHI-CHANG

1 patent