Inventor
MINATO TADAHARU
JP45 patents
⚠️ This page may combine multiple inventors who share the name “MINATO TADAHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
41 patentsUS6103578AAug 15, 2000
Method for forming high breakdown semiconductor device
MITSUBISHI ELECTRIC CORP151 citations99
US6040600AMar 21, 2000
Trenched high breakdown voltage semiconductor device
MITSUBISHI ELECTRIC CORP284 citations99
US6225649B1May 1, 2001
Insulated-gate bipolar semiconductor device
MITSUBISHI ELECTRIC CORP108 citations98
US6821824B2Nov 23, 2004
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP53 citations96
US6307246B1Oct 23, 2001
Semiconductor resurf devices formed by oblique trench implantation
MITSUBISHI ELECTRIC CORP194 citations96
US5977570ANov 2, 1999
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP41 citations96
US5783491AJul 21, 1998
Method of forming a truck MOS gate or a power semiconductor device
MITSUBISHI ELECTRIC CORP85 citations96
US5508534AApr 16, 1996
Trench gate type insulated gate bipolar transistor
MITSUBISHI ELECTRIC CORP78 citations96
US5736438AApr 7, 1998
Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same
MITSUBISHI ELECTRIC CORP46 citations95
US5514880AMay 7, 1996
Field effect thin-film transistor for an SRAM with reduced standby current
MITSUBISHI ELECTRIC CORP56 citations95
US7253031B2Aug 7, 2007
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP37 citations93
US6867437B2Mar 15, 2005
Semiconductor device
MITSUBISHI ELECTRIC CORP21 citations93
US6445012B2Sep 3, 2002
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP16 citations93
US6265735B1Jul 24, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP22 citations93
US6100575AAug 8, 2000
Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device
MITSUBISHI ELECTRIC CORP18 citations93
US5773851AJun 30, 1998
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP43 citations93
US7067874B2Jun 27, 2006
Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round
MITSUBISHI ELECTRIC CORP13 citations92
US6518144B2Feb 11, 2003
Semiconductor device having trenches and process for same
MITSUBISHI ELECTRIC CORP42 citations92
US6331466B1Dec 18, 2001
Insulated gate semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP37 citations92
US6323508B1Nov 27, 2001
Insulated gate semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP28 citations92
US6107650AAug 22, 2000
Insulated gate semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP38 citations92
US5578522ANov 26, 1996
Semiconductor device and method of fabricating same
MITSUBISHI ELECTRIC CORP28 citations92
US7105387B2Sep 12, 2006
Semiconductor device and manufacturing method for the same
MITSUBISHI ELECTRIC CORP13 citations84
US6949798B2Sep 27, 2005
Semiconductor device
MITSUBISHI ELECTRIC CORP9 citations74
US6897493B2May 24, 2005
Semiconductor device
MITSUBISHI ELECTRIC CORP9 citations74
US6693310B1Feb 17, 2004
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP12 citations74
US6465871B2Oct 15, 2002
Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device
MITSUBISHI ELECTRIC CORP5 citations74
US5086330AFeb 4, 1992
Bipolar semiconductor switching device
MITSUBISHI ELECTRIC CORP12 citations74
US6710401B2Mar 23, 2004
Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round
MITSUBISHI ELECTRIC CORP10 citations73
US8377832B2Feb 19, 2013
Method for manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP5 citations72
US7009239B2Mar 7, 2006
Vertical semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP9 citations71
US11222151B2Jan 11, 2022
SEB resistance evaluation method and SEB resistance evaluation device
MITSUBISHI ELECTRIC CORP2 citations69
US6252259B1Jun 26, 2001
Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device
MITSUBISHI ELECTRIC CORP2 citations63
US5925899AJul 20, 1999
Vertical type insulated gate bipolar transistor having a planar gate structure
MITSUBISHI ELECTRIC CORP6 citations63
US5510274AApr 23, 1996
Method of controlling a carrier lifetime in a semiconductor switching device
MITSUBISHI ELECTRIC CORP2 citations63
US5144402ASep 1, 1992
Semiconductor switching device and method of controlling a carrier life time in a semiconductor switching device
MITSUBISHI ELECTRIC CORP4 citations63
US7955930B2Jun 7, 2011
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP3 citations62
US7701003B2Apr 20, 2010
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP3 citations62
US10866272B2Dec 15, 2020
Simulation circuit and simulation method
MITSUBISHI ELECTRIC CORP1 citations59
US7829898B2Nov 9, 2010
Power semiconductor device having raised channel and manufacturing method thereof
MITSUBISHI ELECTRIC CORP1 citations51
US9673308B2Jun 6, 2017
Semiconductor device manufacturing method
MITSUBISHI ELECTRIC CORP0 citations36