P

Inventor

DEPUYDT JAMES M

US20 patents
⚠️ This page may combine multiple inventors who share the name “DEPUYDT JAMES M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MINNESOTA MINING & MFG

13 patents
US5395791AMar 7, 1995

Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy

MINNESOTA MINING & MFG228 citations99
US5635718AJun 3, 1997

Multi-module radiation detecting device and fabrication method

MINNESOTA MINING & MFG124 citations96
US5404027AApr 4, 1995

Buried ridge II-VI laser diode

MINNESOTA MINING & MFG59 citations96
US5291507AMar 1, 1994

Blue-green laser diode

MINNESOTA MINING & MFG65 citations96
US5574296ANov 12, 1996

Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer

MINNESOTA MINING & MFG50 citations95
US5248631ASep 28, 1993

Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals

MINNESOTA MINING & MFG51 citations95
US5538918AJul 23, 1996

Method of fabricating a buried-ridge II-VI laser diode

MINNESOTA MINING & MFG32 citations92
US5513199AApr 30, 1996

Blue-green laser diode

MINNESOTA MINING & MFG24 citations92
US5319219AJun 7, 1994

Single quantum well II-VI laser diode without cladding

MINNESOTA MINING & MFG27 citations92
US5274269ADec 28, 1993

Ohmic contact for p-type group II-IV compound semiconductors

MINNESOTA MINING & MFG31 citations92
US5213998AMay 25, 1993

Method for making an ohmic contact for p-type group II-VI compound semiconductors

MINNESOTA MINING & MFG26 citations92
US5396103AMar 7, 1995

Graded composition ohmic contact for P-type II-VI semiconductors

MINNESOTA MINING & MFG30 citations89
US5879962AMar 9, 1999

III-V/II-VI Semiconductor interface fabrication method

MINNESOTA MINING & MFG17 citations82

IMATION CORP

4 patents

3M INNOVATIVE PROPERTIES CO

1 patent

DEPUYDT JAMES M

1 patent

LEVINSON ERIC D

1 patent