Inventor
CHENG HWA
US13 patents
⚠️ This page may combine multiple inventors who share the name “CHENG HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MINNESOTA MINING & MFG
11 patentsUS5395791AMar 7, 1995
Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
MINNESOTA MINING & MFG228 citations99
US5404027AApr 4, 1995
Buried ridge II-VI laser diode
MINNESOTA MINING & MFG59 citations96
US5291507AMar 1, 1994
Blue-green laser diode
MINNESOTA MINING & MFG65 citations96
US5574296ANov 12, 1996
Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer
MINNESOTA MINING & MFG50 citations95
US5248631ASep 28, 1993
Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
MINNESOTA MINING & MFG51 citations95
US5538918AJul 23, 1996
Method of fabricating a buried-ridge II-VI laser diode
MINNESOTA MINING & MFG32 citations92
US5513199AApr 30, 1996
Blue-green laser diode
MINNESOTA MINING & MFG24 citations92
US5319219AJun 7, 1994
Single quantum well II-VI laser diode without cladding
MINNESOTA MINING & MFG27 citations92
US5274269ADec 28, 1993
Ohmic contact for p-type group II-IV compound semiconductors
MINNESOTA MINING & MFG31 citations92
US5213998AMay 25, 1993
Method for making an ohmic contact for p-type group II-VI compound semiconductors
MINNESOTA MINING & MFG26 citations92
US5396103AMar 7, 1995
Graded composition ohmic contact for P-type II-VI semiconductors
MINNESOTA MINING & MFG30 citations89