Inventor

LEE SANG IN

US122 patents

⚠️ This page may combine multiple inventors who share the name “LEE SANG IN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE SANG IN

SAMSUNG ELECTRONICS CO LTD

Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby

Method for manufacturing thin film using atomic layer deposition

Method for forming dielectric film of capacitor having different thicknesses partly

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same

Method for forming metal layer using atomic layer deposition

Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature

Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device

Method of forming thin film using atomic layer deposition method

Method of delivering gas into reaction chamber and shower head used to deliver gas

Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same

Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer

Wiring structure of semiconductor device and method for manufacturing the same

Method for forming a wiring layer

Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer

Semiconductor device and manufacturing method thereof

Method for manufacturing a semiconductor memory device having capacitive storage

Method for forming a wiring layer a semiconductor device

Semiconductor device having an improved wiring layer

Semiconductor device having a multi-layer metallization structure

Semiconductor device having a multi-layer metallization structure

Semiconductor device and method for manufacturing the same

Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film

Multi-function printer

Integrated circuit capacitors including barrier layers having grain boundary filling material

Semiconductor device having a multi-layer metal contact

Method for forming a planarized composite metal layer in a semiconductor device

Printer

Printer

Formation method of interconnection in semiconductor device

Semiconductor device having a multi-layer contact structure

Method for manufacturing a multi-layer wiring structure of a semiconductor device

Multi-layer film for a thin film structure and a capacitor using the same

Method for forming metal interconnection in semiconductor device

Methods for forming an amorphous tantalum nitride film

Method of manufacturing a capacitor and a capacitor electrode in semiconductor device

Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material

Method for manufacturing a semiconductor device having a wiring layer without producing silicon precipitates

Method for forming metal layer of a semiconductor device

LEE SANG IN

Enhanced deposition of layer on substrate using radicals

Method for forming thin film using radicals generated by plasma

Atomic layer deposition using radicals of gas mixture

Vapor deposition reactor and method for forming thin film

Magnetic field assisted deposition

Vapor deposition reactor for forming thin film

Deposition of layer using depositing apparatus with reciprocating susceptor

Method for forming thin film using radicals generated by plasma

AVIZA TECH INC

Atomic layer deposition of hafnium-based high-k dielectric

ROBORUS CO LTD

Computer screen with menu display

S PRINTING SOLUTION CO LTD

Printer

KIM JONG-KYU

Printer