Inventor
KATAYAMA MASAYA
JP25 patents
⚠️ This page may combine multiple inventors who share the name “KATAYAMA MASAYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
16 patentsUS5789788AAug 4, 1998
Semiconductor device with first and second wells which have opposite conductivity types and a third well region formed on one of the first and second wells
FUJITSU LTD53 citations95
US6093943AJul 25, 2000
Semiconductor device and method of producing the same
FUJITSU LTD24 citations92
US5525534AJun 11, 1996
Method of producing a semiconductor device using a reticle having a polygonal shaped hole
FUJITSU LTD29 citations92
US6326254B1Dec 4, 2001
Method of manufacturing semiconductor device
FUJITSU LTD17 citations91
US6399472B1Jun 4, 2002
Semiconductor device having a fuse and a fabrication method thereof
FUJITSU LTD17 citations90
US5661340AAug 26, 1997
Dynamic random access memory having a stacked fin capacitor with reduced fin thickness
FUJITSU LTD18 citations83
US7005690B2Feb 28, 2006
Solid-state image sensor
FUJITSU LTD11 citations81
US7419864B2Sep 2, 2008
Semiconductor device and method of manufacturing the same
FUJITSU LTD8 citations74
US5453397ASep 26, 1995
Manufacture of semiconductor device with field oxide
FUJITSU LTD13 citations74
US5907773AMay 25, 1999
Semiconductor device and method of producing the same
FUJITSU LTD7 citations73
US7285838B2Oct 23, 2007
Semiconductor device and method of manufacturing the same
FUJITSU LTD4 citations63
US7452771B2Nov 18, 2008
Method for fabricating a semiconductor device
FUJITSU LTD3 citations62
US6977411B2Dec 20, 2005
Semiconductor device comprising transistors having control gates and floating gate electrodes
FUJITSU LTD5 citations62
US6251743B1Jun 26, 2001
Method of liquid treatment of microstructures comprising bendable structural members
FUJITSU LTD2 citations62
US5652167AJul 29, 1997
Method of liquid treatment of micro-structures comprising structural members liable to be bent
FUJITSU LTD1 citations62
US5561314AOct 1, 1996
Manufacture of semiconductor device with field oxide
FUJITSU LTD1 citations52