Inventor
LEVY KARL B
US29 patents
⚠️ This page may combine multiple inventors who share the name “LEVY KARL B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NOVELLUS SYSTEMS INC
20 patentsUS8367546B2Feb 5, 2013
Methods for forming all tungsten contacts and lines
NOVELLUS SYSTEMS INC42 citations98
US8053365B2Nov 8, 2011
Methods for forming all tungsten contacts and lines
NOVELLUS SYSTEMS INC66 citations98
US7772114B2Aug 10, 2010
Method for improving uniformity and adhesion of low resistivity tungsten film
NOVELLUS SYSTEMS INC89 citations98
US7141494B2Nov 28, 2006
Method for reducing tungsten film roughness and improving step coverage
NOVELLUS SYSTEMS INC147 citations98
US7005372B2Feb 28, 2006
Deposition of tungsten nitride
NOVELLUS SYSTEMS INC187 citations98
US6902620B1Jun 7, 2005
Atomic layer deposition systems and methods
NOVELLUS SYSTEMS INC86 citations98
US6179973B1Jan 30, 2001
Apparatus and method for controlling plasma uniformity across a substrate
NOVELLUS SYSTEMS INC167 citations98
US5942799AAug 24, 1999
Multilayer diffusion barriers
NOVELLUS SYSTEMS INC99 citations98
US7691749B2Apr 6, 2010
Deposition of tungsten nitride
NOVELLUS SYSTEMS INC97 citations97
US7262125B2Aug 28, 2007
Method of forming low-resistivity tungsten interconnects
NOVELLUS SYSTEMS INC91 citations97
US6977014B1Dec 20, 2005
Architecture for high throughput semiconductor processing applications
NOVELLUS SYSTEMS INC46 citations96
US6193854B1Feb 27, 2001
Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
NOVELLUS SYSTEMS INC145 citations96
US6554914B1Apr 29, 2003
Passivation of copper in dual damascene metalization
NOVELLUS SYSTEMS INC62 citations95
US6497734B1Dec 24, 2002
Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput
NOVELLUS SYSTEMS INC461 citations95
US6497796B1Dec 24, 2002
Apparatus and method for controlling plasma uniformity across a substrate
NOVELLUS SYSTEMS INC34 citations92
US6444105B1Sep 3, 2002
Physical vapor deposition reactor including magnet to control flow of ions
NOVELLUS SYSTEMS INC22 citations92
US6541371B1Apr 1, 2003
Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing
NOVELLUS SYSTEMS INC17 citations91
US6500321B1Dec 31, 2002
Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
NOVELLUS SYSTEMS INC47 citations91
US6534404B1Mar 18, 2003
Method of depositing diffusion barrier for copper interconnect in integrated circuit
NOVELLUS SYSTEMS INC50 citations90
US6905959B1Jun 14, 2005
Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processing
NOVELLUS SYSTEMS INC14 citations82
APPLIED MATERIALS INC
6 patentsUS5126231AJun 30, 1992
Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
APPLIED MATERIALS INC166 citations99
US5298465AMar 29, 1994
Plasma etching system
APPLIED MATERIALS INC76 citations96
US5183775AFeb 2, 1993
Method for forming capacitor in trench of semiconductor wafer by implantation of trench surfaces with oxygen
APPLIED MATERIALS INC83 citations96
US5225024AJul 6, 1993
Magnetically enhanced plasma reactor system for semiconductor processing
APPLIED MATERIALS INC140 citations95
US5976310ANov 2, 1999
Plasma etch system
APPLIED MATERIALS INC52 citations92
US5126008AJun 30, 1992
Corrosion-free aluminum etching process for fabricating an integrated circuit structure
APPLIED MATERIALS INC14 citations74