Inventor
CHA SANGUHN
KR23 patents
Patents
23 patentsUS11615861B2Mar 28, 2023
Semiconductor memory devices and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD20 citations93
US11462292B1Oct 4, 2022
Error correction circuit of semiconductor memory device and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD14 citations85
US11416335B2Aug 16, 2022
Semiconductor memory devices and memory systems with enhanced error detection and correction
SAMSUNG ELECTRONICS CO LTD16 citations85
US11170868B2Nov 9, 2021
Semiconductor memory devices and memory systems
SAMSUNG ELECTRONICS CO LTD8 citations83
US11106535B2Aug 31, 2021
Error correction circuit of semiconductor memory device and semiconductor memory device
SAMSUNG ELECTRONICS CO LTD7 citations83
US9971697B2May 15, 2018
Nonvolatile memory module having DRAM used as cache, computing system having the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations83
US11656935B2May 23, 2023
Semiconductor memory devices and memory systems
SAMSUNG ELECTRONICS CO LTD5 citations74
US11626181B2Apr 11, 2023
Semiconductor memory devices and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations74
US11605441B1Mar 14, 2023
Memory systems having memory devices therein with enhanced error correction capability and methods of operating same
SAMSUNG ELECTRONICS CO LTD4 citations74
US11269723B2Mar 8, 2022
Memory controller and memory system including the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US11068340B2Jul 20, 2021
Semiconductor memory devices and memory systems
SAMSUNG ELECTRONICS CO LTD2 citations72
US11436079B2Sep 6, 2022
Semiconductor memory devices having enhanced error correction circuits therein
SAMSUNG ELECTRONICS CO LTD4 citations71
US11194653B2Dec 7, 2021
Semiconductor memory device, and memory system having the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US10339042B2Jul 2, 2019
Memory device including column redundancy
SAMSUNG ELECTRONICS CO LTD6 citations69
US10866855B2Dec 15, 2020
Memory system varying operation of memory controller according to internal status of memory device
SAMSUNG ELECTRONICS CO LTD4 citations68
US12148494B2Nov 19, 2024
Semiconductor memory devices and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12057184B2Aug 6, 2024
Memory systems having memory devices therein with enhanced error correction capability and methods of operating same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12379855B2Aug 5, 2025
Semiconductor memory device including a cyclic redundancy check engine and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12136463B2Nov 5, 2024
Semiconductor memory devices and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US11947810B2Apr 2, 2024
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11366716B2Jun 21, 2022
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US10140176B2Nov 27, 2018
Semiconductor memory device, memory system including the same, and method of error correction of the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US11074127B1Jul 27, 2021
Semiconductor memory devices and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations43