Inventor
HONG SEUNG-HEE
KR45 patents
⚠️ This page may combine multiple inventors who share the name “HONG SEUNG-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRO MECH
12 patentsUS10395825B2Aug 27, 2019
Multilayer ceramic capacitor
SAMSUNG ELECTRO MECH10 citations84
US11217372B2Jan 4, 2022
Coil component
SAMSUNG ELECTRO MECH4 citations73
US10690998B2Jun 23, 2020
Camera module
SAMSUNG ELECTRO MECH2 citations73
US11495391B2Nov 8, 2022
Inductor
SAMSUNG ELECTRO MECH2 citations72
US11133126B2Sep 28, 2021
Coil component
SAMSUNG ELECTRO MECH4 citations72
US10930427B2Feb 23, 2021
Coil component
SAMSUNG ELECTRO MECH0 citations62
US11733538B2Aug 22, 2023
Camera module
SAMSUNG ELECTRO MECH0 citations52
US11322285B2May 3, 2022
Inductor
SAMSUNG ELECTRO MECH0 citations52
US11294196B2Apr 5, 2022
Camera module
SAMSUNG ELECTRO MECH0 citations52
US10726999B2Jul 28, 2020
Composite electronic component and board having the same
SAMSUNG ELECTRO MECH0 citations52
US10629373B2Apr 21, 2020
Thin film capacitor
SAMSUNG ELECTRO MECH0 citations52
US10796836B2Oct 6, 2020
Inductor
SAMSUNG ELECTRO MECH0 citations41
HYNIX SEMICONDUCTOR INC
9 patentsUS7682900B2Mar 23, 2010
Method of fabricating flash memory device
HYNIX SEMICONDUCTOR INC16 citations84
US7507628B2Mar 24, 2009
Method of manufacturing a non-volatile memory device
HYNIX SEMICONDUCTOR INC9 citations84
US7713867B2May 11, 2010
Method for forming a metal line in a semiconductor device
HYNIX SEMICONDUCTOR INC4 citations63
US7557033B2Jul 7, 2009
Method of forming metal line of semiconductor memory device
HYNIX SEMICONDUCTOR INC2 citations63
US7504333B2Mar 17, 2009
Method of forming bit line of semiconductor device
HYNIX SEMICONDUCTOR INC4 citations62
US7517793B2Apr 14, 2009
Method of forming metal wire in semiconductor device
HYNIX SEMICONDUCTOR INC0 citations52
US7560340B2Jul 14, 2009
Method of manufacturing flash memory device
HYNIX SEMICONDUCTOR INC1 citations51
US7462536B2Dec 9, 2008
Method of forming bit line of semiconductor memory device
HYNIX SEMICONDUCTOR INC0 citations51
US7601632B2Oct 13, 2009
Method of forming a metal line of a semiconductor device
HYNIX SEMICONDUCTOR INC0 citations41
SK HYNIX INC
6 patentsUS9293362B2Mar 22, 2016
Semiconductor device including air gaps and method of fabricating the same
SK HYNIX INC21 citations92
US9202774B2Dec 1, 2015
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC15 citations92
US9514980B2Dec 6, 2016
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC8 citations84
US9466603B2Oct 11, 2016
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC11 citations84
US9159609B2Oct 13, 2015
Semiconductor device with air gap spacer and capping barrier layer and method for fabricating the same
SK HYNIX INC15 citations84
US8822335B2Sep 2, 2014
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC10 citations84
CHEIL IND INC
2 patentsUS9738787B2Aug 22, 2017
Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer
CHEIL IND INC0 citations51
US9890255B2Feb 13, 2018
Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming
CHEIL IND INC0 citations49
KOREA KUMHO PETROCHEM CO LTD
2 patentsPARK EUN-SU
2 patentsUS9574108B2Feb 21, 2017
Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
PARK EUN-SU0 citations37
US9362030B2Jun 7, 2016
Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
PARK EUN-SU0 citations37