Inventor

BERGNER WOLFGANG

AT45 patents

⚠️ This page may combine multiple inventors who share the name “BERGNER WOLFGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BERGNER WOLFGANG

INFINEON TECHNOLOGIES AG

Semiconductor device with a trench electrode

Semiconductor device having a lower diode region arranged below a trench

Method of forming a silicon-carbide device with a shielded gate

Structure and method for forming a body contact for vertical transistor cells

Semiconductor device having a source electrode contact trench

Semiconductor device and transistor cell having a diode region

Semiconductor device with diode region and trench gate structure

Dram cell pair and dram memory cell array

SiC trench transistor device and methods of manufacturing thereof

Silicon carbide semiconductor component comprising trench gate structures and shielding regions

Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device

Semiconductor device with diode region

Semiconductor device with stripe-shaped trench gate structures and gate connector structure

Semiconductor device and transistor cell having a diode region

Semiconductor device including silicon carbide body and method of manufacturing

Semiconductor device with transistor cells and a drift structure and method of manufacturing

Process to suppress lithography at a wafer edge

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

Method for producing a silicon carbide semiconductor component

Semiconductor device including trench contact structure and manufacturing method

Semiconductor device including silicon carbide body and method of manufacturing

Semiconductor device with stripe-shaped trench gate structures and gate connector structure

Silicon carbide field-effect transistor including shielding areas

Silicon carbide field-effect transistor including shielding areas

Silicon carbide device and a method for forming a silicon carbide device

SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof

SiC device and methods of manufacturing thereof

Method for producing a silicon carbide semiconductor component

Semiconductor device and method for forming a semiconductor device

Semiconductor device and method for forming a semiconductor device

Transistor device with a varying gate runner resistivity per area

Silicon-carbide transistor device with a shielded gate

Semiconductor device with a semiconductor body of silicon carbide

Silicon carbide device and a method for forming a silicon carbide device

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

IBM

Semiconductor fuses and antifuses in vertical DRAMS

Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask

Self-aligned buried strap process using doped HDP oxide

Self-aligned buried strap process using doped HDP oxide

Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask

SIEMENS AG

Controllability of a buried device layer

Deposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etching

Self aligned buried plate

Methods for protecting device components from chemical mechanical polish induced defects

INFINEON TECHNOLOGIES CORP

Single sided buried strap