Inventor

ESTEVE ROMAIN

DE49 patents

⚠️ This page may combine multiple inventors who share the name “ESTEVE ROMAIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ESTEVE ROMAIN

INFINEON TECHNOLOGIES AG

Semiconductor device with a trench electrode

Semiconductor device having a lower diode region arranged below a trench

Method of forming a silicon-carbide device with a shielded gate

Semiconductor device having a source electrode contact trench

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

Semiconductor device and transistor cell having a diode region

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

Semiconductor device with diode region and trench gate structure

SiC trench transistor device and methods of manufacturing thereof

Semiconductor device with diode region

Semiconductor device and transistor cell having a diode region

Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction

Semiconductor device with transistor cells and a drift structure and method of manufacturing

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure

Method of manufacturing semiconductor device with silicon carbide body

Silicon carbide device with compensation region and method of manufacturing

Silicon carbide field-effect transistor including shielding areas

Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure

Semiconductor device with silicon carbide body

Silicon carbide field-effect transistor including shielding areas

SiC power semiconductor device with integrated Schottky junction

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

SiC semiconductor device with offset in trench bottom

Semiconductor device, junction field effect transistor and vertical field effect transistor

SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof

SiC device and methods of manufacturing thereof

Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure

Silicon carbide device with Schottky contact

Semiconductor device and method for forming a semiconductor device

Semiconductor device and method for forming a semiconductor device

Silicon carbide device with compensation layer and method of manufacturing

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

SiC device with buried doped region

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

Silicon-carbide transistor device with a shielded gate

Self aligned silicon carbide contact formation using protective layer

Self aligned silicon carbide contact formation using protective layer

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

Carbon based contact structure for silicon carbide device technical field

INFINEON TECHNOLOGIES AUSTRIA AG

Method of forming compound semiconductor body

Method of producing a semiconductor device

Method of producing a semiconductor device

Method of manufacturing a vertical junction field effect transistor

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device

Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer

Nexperia BV

Semiconductor device with improved junction termination extension region