Inventor

SHEN HONGLIANG

US23 patents

⚠️ This page may combine multiple inventors who share the name “SHEN HONGLIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHEN HONGLIANG

GLOBALFOUNDRIES INC

Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices

Method for uniform recess depth and fill in single diffusion break for fin-type process and resulting devices

Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product

Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices

Method for forming single diffusion breaks between finFET devices and the resulting devices

Product comprised of FinFET devices with single diffusion break isolation structures

Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same

T-shaped single diffusion barrier with single mask approach process flow

T-shaped fin isolation region and methods of fabrication

FinFET cut isolation opening revision to compensate for overlay inaccuracy

Shallow trench isolation integration methods and devices formed thereby

Method to form high performance fin profile for 12LP and above

Overlay performance for a fin field effect transistor device

FinFET cut isolation opening revision to compensate for overlay inaccuracy

Shallow trench isolation integration methods and devices formed thereby

Uniform exposed raised structures for non-planar semiconductor devices

Double patterning via triangular shaped sidewall spacers

Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure

STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method

Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure

GLOBALFOUNDRIES US INC

Fin-based anti-fuse device for integrated circuit (IC) products, methods of making such an anti-fuse device and IC products comprising such an anti-fuse device

SRAM bit cells formed with dummy structures

GLOBALFOUNDARIES INC

FinFET fabrication method