Inventor
KLUTH GEORGE J
US23 patents
⚠️ This page may combine multiple inventors who share the name “KLUTH GEORGE J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
18 patentsUS6562718B1May 13, 2003
Process for forming fully silicided gates
ADVANCED MICRO DEVICES INC107 citations98
US7723192B2May 25, 2010
Integrated circuit long and short channel metal gate devices and method of manufacture
ADVANCED MICRO DEVICES INC16 citations92
US6602754B1Aug 5, 2003
Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer
ADVANCED MICRO DEVICES INC23 citations92
US6555453B1Apr 29, 2003
Fully nickel silicided metal gate with shallow junction formed
ADVANCED MICRO DEVICES INC47 citations92
US6486062B1Nov 26, 2002
Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate
ADVANCED MICRO DEVICES INC20 citations92
US7176531B1Feb 13, 2007
CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric
ADVANCED MICRO DEVICES INC22 citations91
US6872613B1Mar 29, 2005
Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure
ADVANCED MICRO DEVICES INC28 citations91
US7998832B2Aug 16, 2011
Semiconductor device with isolation trench liner, and related fabrication methods
ADVANCED MICRO DEVICES INC11 citations84
US7902599B2Mar 8, 2011
Integrated circuit having long and short channel metal gate devices and method of manufacture
ADVANCED MICRO DEVICES INC8 citations84
US6841449B1Jan 11, 2005
Two-step process for nickel deposition
ADVANCED MICRO DEVICES INC12 citations83
US6627504B1Sep 30, 2003
Stacked double sidewall spacer oxide over nitride
ADVANCED MICRO DEVICES INC18 citations83
US6902977B1Jun 7, 2005
Method for forming polysilicon gate on high-k dielectric and related structure
ADVANCED MICRO DEVICES INC10 citations74
US6391730B1May 21, 2002
Process for fabricating shallow pocket regions in a non-volatile semiconductor device
ADVANCED MICRO DEVICES INC11 citations74
US6376341B1Apr 23, 2002
Optimization of thermal cycle for the formation of pocket implants
ADVANCED MICRO DEVICES INC11 citations74
US6632740B1Oct 14, 2003
Two-step process for nickel deposition
ADVANCED MICRO DEVICES INC12 citations73
US6541866B1Apr 1, 2003
Cobalt barrier for nickel silicidation of a gate electrode
ADVANCED MICRO DEVICES INC7 citations73
US6689687B1Feb 10, 2004
Two-step process for nickel deposition
ADVANCED MICRO DEVICES INC7 citations65
US6992370B1Jan 31, 2006
Memory cell structure having nitride layer with reduced charge loss and method for fabricating same
ADVANCED MICRO DEVICES INC2 citations60