P

Inventor

SCHENKER RICHARD

US17 patents

Patents

17 patents
US6701004B1Mar 2, 2004

Detecting defects on photomasks

INTEL CORP67 citations93
US6883159B2Apr 19, 2005

Patterning semiconductor layers using phase shifting and assist features

INTEL CORP18 citations91
US7084960B2Aug 1, 2006

Lithography using controlled polarization

INTEL CORP18 citations80
US11764263B2Sep 19, 2023

Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches

INTEL CORP2 citations73
US11462469B2Oct 4, 2022

Single mask lithography line end enhancement

INTEL CORP2 citations71
US11569231B2Jan 31, 2023

Non-planar transistors with channel regions having varying widths

INTEL CORP3 citations69
US12506059B2Dec 23, 2025

Vertically spaced intra-level interconnect line metallization for integrated circuit devices

INTEL CORP0 citations61
US11948874B2Apr 2, 2024

Vertically spaced intra-level interconnect line metallization for integrated circuit devices

INTEL CORP0 citations61
US11837542B2Dec 5, 2023

Interconnects having a portion without a liner material and related structures, devices, and methods

INTEL CORP0 citations61
US11264325B2Mar 1, 2022

Interconnects having a portion without a liner material and related structures, devices, and methods

INTEL CORP0 citations61
US7158275B2Jan 2, 2007

Polarization modulator

INTEL CORP2 citations61
US11424160B2Aug 23, 2022

Self-aligned local interconnects

INTEL CORP0 citations60
US7816061B2Oct 19, 2010

Lithography masks for improved line-end patterning

INTEL CORP5 citations60
US11300885B2Apr 12, 2022

EUV phase-shift SRAF masks by means of embedded phase shift layers

INTEL CORP0 citations58
US8035802B2Oct 11, 2011

Method and apparatus for lithographic imaging using asymmetric illumination

INTEL CORP0 citations51
US7531295B2May 12, 2009

Method and apparatus for lithographic imaging using asymmetric illumination

INTEL CORP0 citations51
US6503672B2Jan 7, 2003

Electron beam projection utilizing multiple exposures with different current densities

INTEL CORP1 citations51